An ultra low-power RF bipolar technology on glass

R. Dekker; P. Baltus; M. van Deurzen; W. v.d. Einden; H. Maas; A. Wagemans

doi:10.1109/IEDM.1997.650531

An ultra low-power RF bipolar technology on glass

R. Dekker, P. Baltus, M. van Deurzen, W. v.d. Einden, H. Maas, A. Wagemans

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

Abstract

Silicon-on-anything (SOA) technology is used to integrate an ultra low-power bipolar high-frequency process with high-quality passive components including spiral inductors. The first step to low-power RF operation is proper device scaling. This is done by glueing the fully processed SOI wafers, top-down, to a glass substrate and removing the silicon substrate by grinding and KOH etching selectively to the buried oxide layer. Next, a PECVD passivation layer is deposited, contacts to bondpads are etched and dies are separated and bonded followed by standard packaging. Circuits with record low-power RF performance are demonstrated.

Original language	English
Title of host publication	International Electron Devices Meeting. IEDM Technical Digest
Publisher	Institute of Electrical and Electronics Engineers
Pages	921-923
Number of pages	3
ISBN (Print)	0-7803-4100-7
DOIs	https://doi.org/10.1109/IEDM.1997.650531
Publication status	Published - 6 Aug 2002
Externally published	Yes
Event	1997 IEEE International Electron Devices Meeting, IEDM 1997 - Washington, United States Duration: 7 Dec 1997 → 10 Dec 1997

Conference

Conference	1997 IEEE International Electron Devices Meeting, IEDM 1997
Abbreviated title	IEDM 1997
Country/Territory	United States
City	Washington
Period	7/12/97 → 10/12/97

Access to Document

10.1109/IEDM.1997.650531

Cite this

@inproceedings{146ae7f0973746a99333b2b640bf048c,

title = "An ultra low-power RF bipolar technology on glass",

abstract = "Silicon-on-anything (SOA) technology is used to integrate an ultra low-power bipolar high-frequency process with high-quality passive components including spiral inductors. The first step to low-power RF operation is proper device scaling. This is done by glueing the fully processed SOI wafers, top-down, to a glass substrate and removing the silicon substrate by grinding and KOH etching selectively to the buried oxide layer. Next, a PECVD passivation layer is deposited, contacts to bondpads are etched and dies are separated and bonded followed by standard packaging. Circuits with record low-power RF performance are demonstrated.",

author = "R. Dekker and P. Baltus and \{van Deurzen\}, M. and \{v.d. Einden\}, W. and H. Maas and A. Wagemans",

year = "2002",

month = aug,

day = "6",

doi = "10.1109/IEDM.1997.650531",

language = "English",

isbn = "0-7803-4100-7",

pages = "921--923",

booktitle = "International Electron Devices Meeting. IEDM Technical Digest",

publisher = "Institute of Electrical and Electronics Engineers",

address = "United States",

note = "1997 IEEE International Electron Devices Meeting, IEDM 1997, IEDM 1997 ; Conference date: 07-12-1997 Through 10-12-1997",

}

Dekker, R, Baltus, P, van Deurzen, M, v.d. Einden, W, Maas, H & Wagemans, A 2002, An ultra low-power RF bipolar technology on glass. in International Electron Devices Meeting. IEDM Technical Digest., 650531, Institute of Electrical and Electronics Engineers, pp. 921-923, 1997 IEEE International Electron Devices Meeting, IEDM 1997, Washington, Washington, United States, 7/12/97. https://doi.org/10.1109/IEDM.1997.650531

TY - GEN

T1 - An ultra low-power RF bipolar technology on glass

AU - Dekker, R.

AU - Baltus, P.

AU - van Deurzen, M.

AU - v.d. Einden, W.

AU - Maas, H.

AU - Wagemans, A.

PY - 2002/8/6

Y1 - 2002/8/6

N2 - Silicon-on-anything (SOA) technology is used to integrate an ultra low-power bipolar high-frequency process with high-quality passive components including spiral inductors. The first step to low-power RF operation is proper device scaling. This is done by glueing the fully processed SOI wafers, top-down, to a glass substrate and removing the silicon substrate by grinding and KOH etching selectively to the buried oxide layer. Next, a PECVD passivation layer is deposited, contacts to bondpads are etched and dies are separated and bonded followed by standard packaging. Circuits with record low-power RF performance are demonstrated.

AB - Silicon-on-anything (SOA) technology is used to integrate an ultra low-power bipolar high-frequency process with high-quality passive components including spiral inductors. The first step to low-power RF operation is proper device scaling. This is done by glueing the fully processed SOI wafers, top-down, to a glass substrate and removing the silicon substrate by grinding and KOH etching selectively to the buried oxide layer. Next, a PECVD passivation layer is deposited, contacts to bondpads are etched and dies are separated and bonded followed by standard packaging. Circuits with record low-power RF performance are demonstrated.

UR - https://www.scopus.com/pages/publications/84886448007

U2 - 10.1109/IEDM.1997.650531

DO - 10.1109/IEDM.1997.650531

M3 - Conference contribution

SN - 0-7803-4100-7

SP - 921

EP - 923

BT - International Electron Devices Meeting. IEDM Technical Digest

PB - Institute of Electrical and Electronics Engineers

T2 - 1997 IEEE International Electron Devices Meeting, IEDM 1997

Y2 - 7 December 1997 through 10 December 1997

ER -

An ultra low-power RF bipolar technology on glass

Abstract

Conference

Access to Document

Other files and links

Fingerprint

Cite this