An SRAM weak cell fault model and a DFT technique with a programmable detection threshold

A. Pavlov, M. Sachdev, J. Pineda de Gyvez

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

    16 Citations (Scopus)
    178 Downloads (Pure)

    Abstract

    SRAM cell stability has become an important design and test issue owing to significant process spreads, non-ideal operational conditions, and subtle manufacturing defects in scaled-down geometries. In this article, we carry out an extensive SRAM SNM sensitivity analysis and propose an SRAM cell stability fault model for weak cell detection. This fault model is used to design and verify a proposed digitally programmable design-for-test (DFT) technique targeting the weak cell detection in embedded SRAMs (eSRAM).
    Original languageEnglish
    Title of host publicationTest Conference, 2004. Proceedings. ITC 2004. International, October 26-28, Ontario Canada
    PublisherInstitute of Electrical and Electronics Engineers
    Pages1006-1015
    ISBN (Print)0-7803-8580-2
    DOIs
    Publication statusPublished - 2004

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