An organic field-effect transistor with programmable polarity

Ronald C.G. Naber, Paul W.M. Blom, Gerwin H. Gelinck, Albert W. Marsman, Dago M. De Leeuw

Research output: Contribution to journalArticleAcademicpeer-review

44 Citations (Scopus)

Abstract

A new type of organic field effect transistor (FET) consisting of an ambipolar semiconductor with a ferroelectric functionalized gate dielectric was presented. The polarity of the channel was remanently switched from p-type to n-type and back, in the ambipolar FET, depending on the polarization state of the ferroelectric. It was found that the gate fields show up as different peaks in the gate current since the ferroelectric switching is a sharp transition at a coercive field. The results show that the FETs may be applied as switches in logic circuits or as a non-volatile memory element.

Original languageEnglish
Pages (from-to)2692-2695
Number of pages4
JournalAdvanced Materials
Volume17
Issue number22
DOIs
Publication statusPublished - 18 Nov 2005
Externally publishedYes

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