A new type of organic field effect transistor (FET) consisting of an ambipolar semiconductor with a ferroelectric functionalized gate dielectric was presented. The polarity of the channel was remanently switched from p-type to n-type and back, in the ambipolar FET, depending on the polarization state of the ferroelectric. It was found that the gate fields show up as different peaks in the gate current since the ferroelectric switching is a sharp transition at a coercive field. The results show that the FETs may be applied as switches in logic circuits or as a non-volatile memory element.
|Number of pages||4|
|Publication status||Published - 18 Nov 2005|