Abstract
We demonstrate the fabrication of an organic Ferroelectric Field Effect Transistor (FeFET) incorporating a ferroelectric gate dielectric made of nanostripes obtained by nanoimprinting poly(vinylidene fluoride-co-trifluoroethylene) over a layer of semiconducting poly(triarylamine). The imprinting process results in a decreased switching voltage for the ferroelectric, by a factor of ca. 1.5, resulting in a decreased operating voltage compared to a reference FeFET with a continuous ferroelectric layer. The transistor consists of a large number of nanostripe-gated transistors placed in parallel, which also offers interesting possibilities for a strong size reduction of organic FeFETs.
Original language | English |
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Article number | 113113 |
Number of pages | 5 |
Journal | Applied Physics Letters |
Volume | 105 |
Issue number | 11 |
DOIs | |
Publication status | Published - 15 Sep 2014 |
Externally published | Yes |