An organic ferroelectric field effect transistor with poly(vinylidene fluoride-co-trifluoroethylene) nanostripes as gate dielectric

R. Cai; H.G. Kassa; A. Marrani; A.J.J.M. van Breemen; G.H. Gelinck; B. Nysten; Z. Hu; A.M. Jonas

doi:10.1063/1.4896292

An organic ferroelectric field effect transistor with poly(vinylidene fluoride-co-trifluoroethylene) nanostripes as gate dielectric

R. Cai, H.G. Kassa, A. Marrani, A.J.J.M. van Breemen, G.H. Gelinck, B. Nysten, Z. Hu, A.M. Jonas

Research output: Contribution to journal › Article › Academic › peer-review

9 Citations (Scopus)

Abstract

We demonstrate the fabrication of an organic Ferroelectric Field Effect Transistor (FeFET) incorporating a ferroelectric gate dielectric made of nanostripes obtained by nanoimprinting poly(vinylidene fluoride-co-trifluoroethylene) over a layer of semiconducting poly(triarylamine). The imprinting process results in a decreased switching voltage for the ferroelectric, by a factor of ca. 1.5, resulting in a decreased operating voltage compared to a reference FeFET with a continuous ferroelectric layer. The transistor consists of a large number of nanostripe-gated transistors placed in parallel, which also offers interesting possibilities for a strong size reduction of organic FeFETs.

Original language	English
Article number	113113
Number of pages	5
Journal	Applied Physics Letters
Volume	105
Issue number	11
DOIs	https://doi.org/10.1063/1.4896292
Publication status	Published - 15 Sep 2014
Externally published	Yes

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Cai, R., Kassa, H. G., Marrani, A., van Breemen, A. J. J. M., Gelinck, G. H., Nysten, B., ... Jonas, A. M. (2014). An organic ferroelectric field effect transistor with poly(vinylidene fluoride-co-trifluoroethylene) nanostripes as gate dielectric. Applied Physics Letters, 105(11), [113113]. https://doi.org/10.1063/1.4896292

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abstract = "We demonstrate the fabrication of an organic Ferroelectric Field Effect Transistor (FeFET) incorporating a ferroelectric gate dielectric made of nanostripes obtained by nanoimprinting poly(vinylidene fluoride-co-trifluoroethylene) over a layer of semiconducting poly(triarylamine). The imprinting process results in a decreased switching voltage for the ferroelectric, by a factor of ca. 1.5, resulting in a decreased operating voltage compared to a reference FeFET with a continuous ferroelectric layer. The transistor consists of a large number of nanostripe-gated transistors placed in parallel, which also offers interesting possibilities for a strong size reduction of organic FeFETs.",

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An organic ferroelectric field effect transistor with poly(vinylidene fluoride-co-trifluoroethylene) nanostripes as gate dielectric. / Cai, R.; Kassa, H.G.; Marrani, A.; van Breemen, A.J.J.M.; Gelinck, G.H.; Nysten, B.; Hu, Z.; Jonas, A.M.

In: Applied Physics Letters, Vol. 105, No. 11, 113113, 15.09.2014.

Research output: Contribution to journal › Article › Academic › peer-review

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