An organic charge trapping memory transistor with bottom source and drain contacts

Maarten Debucquoy, Dieter Bode, Jan Genoe, Gerwin H. Gelinck, Paul Heremans

Research output: Contribution to journalArticleAcademicpeer-review

13 Citations (Scopus)

Abstract

We present an organic charge trapping memory transistor with lithographically defined bottom source and drain contacts. This device can be written and erased at voltages as low as 15 V. More than 500 write and erase cycles and the retention of the trapped charge over more than three months are shown, demonstrating the possibilities of this device as a reprogramable nonvolatile organic memory element.

Original languageEnglish
Article number103311
Number of pages3
JournalApplied Physics Letters
Volume95
Issue number10
DOIs
Publication statusPublished - 18 Sep 2009
Externally publishedYes

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