An organic charge trapping memory transistor with bottom source and drain contacts

Maarten Debucquoy; Dieter Bode; Jan Genoe; Gerwin H. Gelinck; Paul Heremans

doi:10.1063/1.3223588

An organic charge trapping memory transistor with bottom source and drain contacts

Maarten Debucquoy, Dieter Bode, Jan Genoe, Gerwin H. Gelinck, Paul Heremans

Research output: Contribution to journal › Article › Academic › peer-review

14 Citations (Scopus)

Abstract

We present an organic charge trapping memory transistor with lithographically defined bottom source and drain contacts. This device can be written and erased at voltages as low as 15 V. More than 500 write and erase cycles and the retention of the trapped charge over more than three months are shown, demonstrating the possibilities of this device as a reprogramable nonvolatile organic memory element.

Original language	English
Article number	103311
Number of pages	3
Journal	Applied Physics Letters
Volume	95
Issue number	10
DOIs	https://doi.org/10.1063/1.3223588
Publication status	Published - 18 Sept 2009
Externally published	Yes

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10.1063/1.3223588

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title = "An organic charge trapping memory transistor with bottom source and drain contacts",

abstract = "We present an organic charge trapping memory transistor with lithographically defined bottom source and drain contacts. This device can be written and erased at voltages as low as 15 V. More than 500 write and erase cycles and the retention of the trapped charge over more than three months are shown, demonstrating the possibilities of this device as a reprogramable nonvolatile organic memory element.",

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AU - Debucquoy, Maarten

AU - Bode, Dieter

AU - Genoe, Jan

AU - Gelinck, Gerwin H.

AU - Heremans, Paul

PY - 2009/9/18

Y1 - 2009/9/18

N2 - We present an organic charge trapping memory transistor with lithographically defined bottom source and drain contacts. This device can be written and erased at voltages as low as 15 V. More than 500 write and erase cycles and the retention of the trapped charge over more than three months are shown, demonstrating the possibilities of this device as a reprogramable nonvolatile organic memory element.

AB - We present an organic charge trapping memory transistor with lithographically defined bottom source and drain contacts. This device can be written and erased at voltages as low as 15 V. More than 500 write and erase cycles and the retention of the trapped charge over more than three months are shown, demonstrating the possibilities of this device as a reprogramable nonvolatile organic memory element.

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SN - 0003-6951

VL - 95

JO - Applied Physics Letters

JF - Applied Physics Letters

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An organic charge trapping memory transistor with bottom source and drain contacts

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