Abstract
A compact electro-thermal SiC Power MOSFET model implemented in LTSpice is presented in this paper. A 1200 V, 90A CREE SiC power MOSFET (C2M0025120D) has been used in this work to illustrate the parameter extraction and experimental model validation. The dynamic validation has been shown using a double-pulse test circuit. The convergence has been tested with the 4-switch topology of an inverter and a comparison between MAST, Verilog-A and CREE's empirical model of the same device has also been presented.
Original language | English |
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Title of host publication | IECON 2018 |
Subtitle of host publication | 44th Annual Conference of the IEEE Industrial Electronics Society |
Publisher | Institute of Electrical and Electronics Engineers |
Pages | 1011-1016 |
Number of pages | 6 |
ISBN (Electronic) | 978-1-5090-6684-1 |
ISBN (Print) | 978-1-5090-6685-8 |
DOIs | |
Publication status | Published - 26 Dec 2018 |
Externally published | Yes |
Event | 44th Annual Conference of the IEEE Industrial Electronics Society, IECON 2018 - Washington, United States Duration: 21 Oct 2018 → 23 Oct 2018 Conference number: 44 http://www.iecon2018.org/ |
Conference
Conference | 44th Annual Conference of the IEEE Industrial Electronics Society, IECON 2018 |
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Abbreviated title | IECON 2018 |
Country/Territory | United States |
City | Washington |
Period | 21/10/18 → 23/10/18 |
Internet address |
Keywords
- Compact model
- Electro-thermal model
- LTSpice
- Saber
- SiC MOSFET