The authors have measured the low-temperature (0.02<T<10K) electronic conductivity, magnetoresistance and Hall constant in thin (20-200 nm) bismuth films. The aim was to study weak localisation, spin-orbit and electron-electron interaction mechanisms in this well suited material. The authors compared their data with theories of Hikami et al. (1980) and Altshuler et al. (1980, 1981). It was found that their data must be interpreted in terms of two independent mechanisms, i.e. electron-electron interaction and spin-orbit scattering. Weak localisation is completely suppressed by the strong spin-orbit scattering in this material.