@inproceedings{0de39663712644c7aaf93648d6cb0d9b,
title = "An expanding thermal plasma for deposition of a-Si:H",
abstract = "A remote argon/hydrogen plasma is used to deposit amorphous hydrogenated silicon. The plasma is generated in a DC thermal arc (typical operating conditions 0.5 bar, 5 kW) and expands into a low pressure chamber (20 Pa) thus creating a plasma jet with a typical flow velocity of 103 m/s. Pure silane is injected into the jet immediately after the nozzle, in a typical flow mixture of Ar:H2:SiH4=55:10:6 scc/s. The electron temperature in the jet is low (typ. 0.3 eV): silane radicals are thought to be produced mainly by hydrogen abstraction, but also by a sequence of dissociative charge exchange and consecutive dissociative recombination. In-situ ellipsometry yields refractive indices of 3.6-4.2 at 632.8 nm and growth rates of 10-20 nm/s. FTIR analysis yields a hydrogen content of 9-25 at.% and refractive indices of 2.7-3.3 in the infrared. The SiH density decreases with increasing hydrogen content, whereas the SiH2 density increases. Above 11 at.%, the majority of hydrogen is bonded in the SiH2 configuration. The optical bandgap remains constant at approximately 1.72 eV. The photoconductivity is of the order 10-6 (Ωcm)-1 and the photoresponse 106.",
author = "R.J. Severens and G.J.H. Brussaard and H.J.M. Verhoeven and {Van de Sanden}, M.C.M. and D.C. Schram",
year = "1995",
language = "English",
isbn = "3-540-67378-4",
series = "Materials Research Society Symposium Proceedings",
publisher = "Materials Research Society",
pages = "33--38",
editor = "M. Hack and E.A. Schiff and A. Madan",
booktitle = "Amorphous silicon technology 1995 : symposium, April 18-21, San Francisco, California, U.S.A.",
address = "United States",
note = "1995 MRS Spring Meeting ; Conference date: 18-04-1995 Through 21-04-1995",
}