An expanding thermal plasma for deposition of a-Si:H

R.J. Severens, G.J.H. Brussaard, H.J.M. Verhoeven, M.C.M. Van de Sanden, D.C. Schram

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

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A remote argon/hydrogen plasma is used to deposit amorphous hydrogenated silicon. The plasma is generated in a DC thermal arc (typical operating conditions 0.5 bar, 5 kW) and expands into a low pressure chamber (20 Pa) thus creating a plasma jet with a typical flow velocity of 103 m/s. Pure silane is injected into the jet immediately after the nozzle, in a typical flow mixture of Ar:H2:SiH4=55:10:6 scc/s. The electron temperature in the jet is low (typ. 0.3 eV): silane radicals are thought to be produced mainly by hydrogen abstraction, but also by a sequence of dissociative charge exchange and consecutive dissociative recombination. In-situ ellipsometry yields refractive indices of 3.6-4.2 at 632.8 nm and growth rates of 10-20 nm/s. FTIR analysis yields a hydrogen content of 9-25 at.% and refractive indices of 2.7-3.3 in the infrared. The SiH density decreases with increasing hydrogen content, whereas the SiH2 density increases. Above 11 at.%, the majority of hydrogen is bonded in the SiH2 configuration. The optical bandgap remains constant at approximately 1.72 eV. The photoconductivity is of the order 10-6 (Ωcm)-1 and the photoresponse 106.

Original languageEnglish
Title of host publicationAmorphous silicon technology 1995 : symposium, April 18-21, San Francisco, California, U.S.A.
EditorsM. Hack, E.A. Schiff, A. Madan
Place of PublicationPittsburgh
PublisherMaterials Research Society
Number of pages6
ISBN (Print)3-540-67378-4
Publication statusPublished - 1995
Event1995 MRS Spring Meeting - San Francisco, United States
Duration: 18 Apr 199521 Apr 1995

Publication series

NameMaterials Research Society Symposium Proceedings
ISSN (Print)0272-9172


Conference1995 MRS Spring Meeting
Country/TerritoryUnited States
CitySan Francisco
Internet address


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