An empiric approach to establishing MOSFET failure rate induced by single-event burnout

J. Duivenbode, van; B.J.M. Smet

doi:10.1109/EPEPEMC.2008.4635251

An empiric approach to establishing MOSFET failure rate induced by single-event burnout

J. Duivenbode, van, B.J.M. Smet

Electromechanics and Power Electronics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

18 Citations (Scopus)

2 Downloads (Pure)

Abstract

Although the detrimental effect of single-event burnout on semiconductors has been known for over two decades, component manufacturers publish little related data. Through extensive testing, the authors have established trustworthy reliability figures and demonstrate that single-event burnout has a remarkably high impact on power converter failure rate. A standard testing method is proposed for improved power semiconductor qualification testing

Original language	English
Title of host publication	Proceedings of the 13th Power Electronics and Motion Control Conferenc (EPE/PEMC), 1-3 September 2008, Poznan, Poland
Place of Publication	Poznan, Poland
Publisher	Institute of Electrical and Electronics Engineers
Pages	102-107
ISBN (Print)	978-1-4244-1742-1
DOIs	https://doi.org/10.1109/EPEPEMC.2008.4635251
Publication status	Published - 2008
Event	13th International Power Electronics and Motion Control Conference (EPE-PEMC 2008) - Poznań, Poland Duration: 1 Sept 2008 → 3 Sept 2008 Conference number: 13 http://www.epe-pemc2008.put.poznan.pl/home_news.php

Conference

Conference	13th International Power Electronics and Motion Control Conference (EPE-PEMC 2008)
Abbreviated title	EPE-PEMC 2008
Country/Territory	Poland
City	Poznań
Period	1/09/08 → 3/09/08
Internet address	http://www.epe-pemc2008.put.poznan.pl/home_news.php

Access to Document

10.1109/EPEPEMC.2008.4635251

Cite this

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title = "An empiric approach to establishing MOSFET failure rate induced by single-event burnout",

abstract = "Although the detrimental effect of single-event burnout on semiconductors has been known for over two decades, component manufacturers publish little related data. Through extensive testing, the authors have established trustworthy reliability figures and demonstrate that single-event burnout has a remarkably high impact on power converter failure rate. A standard testing method is proposed for improved power semiconductor qualification testing",

author = "{Duivenbode, van}, J. and B.J.M. Smet",

year = "2008",

doi = "10.1109/EPEPEMC.2008.4635251",

language = "English",

isbn = "978-1-4244-1742-1",

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booktitle = "Proceedings of the 13th Power Electronics and Motion Control Conferenc (EPE/PEMC), 1-3 September 2008, Poznan, Poland",

publisher = "Institute of Electrical and Electronics Engineers",

address = "United States",

note = "13th International Power Electronics and Motion Control Conference (EPE-PEMC 2008), EPE-PEMC 2008 ; Conference date: 01-09-2008 Through 03-09-2008",

url = "http://www.epe-pemc2008.put.poznan.pl/home_news.php",

}

Duivenbode, van, J & Smet, BJM 2008, An empiric approach to establishing MOSFET failure rate induced by single-event burnout. in Proceedings of the 13th Power Electronics and Motion Control Conferenc (EPE/PEMC), 1-3 September 2008, Poznan, Poland. Institute of Electrical and Electronics Engineers, Poznan, Poland, pp. 102-107, 13th International Power Electronics and Motion Control Conference (EPE-PEMC 2008), Poznań, Poland, 1/09/08. https://doi.org/10.1109/EPEPEMC.2008.4635251

An empiric approach to establishing MOSFET failure rate induced by single-event burnout. / Duivenbode, van, J.; Smet, B.J.M.

Proceedings of the 13th Power Electronics and Motion Control Conferenc (EPE/PEMC), 1-3 September 2008, Poznan, Poland. Poznan, Poland : Institute of Electrical and Electronics Engineers, 2008. p. 102-107.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

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AU - Smet, B.J.M.

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PY - 2008

Y1 - 2008

N2 - Although the detrimental effect of single-event burnout on semiconductors has been known for over two decades, component manufacturers publish little related data. Through extensive testing, the authors have established trustworthy reliability figures and demonstrate that single-event burnout has a remarkably high impact on power converter failure rate. A standard testing method is proposed for improved power semiconductor qualification testing

AB - Although the detrimental effect of single-event burnout on semiconductors has been known for over two decades, component manufacturers publish little related data. Through extensive testing, the authors have established trustworthy reliability figures and demonstrate that single-event burnout has a remarkably high impact on power converter failure rate. A standard testing method is proposed for improved power semiconductor qualification testing

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DO - 10.1109/EPEPEMC.2008.4635251

M3 - Conference contribution

SN - 978-1-4244-1742-1

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EP - 107

BT - Proceedings of the 13th Power Electronics and Motion Control Conferenc (EPE/PEMC), 1-3 September 2008, Poznan, Poland

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Y2 - 1 September 2008 through 3 September 2008

ER -

An empiric approach to establishing MOSFET failure rate induced by single-event burnout

Abstract

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