An empiric approach to establishing MOSFET failure rate induced by single-event burnout

J. Duivenbode, van, B.J.M. Smet

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

19 Citations (Scopus)
2 Downloads (Pure)

Abstract

Although the detrimental effect of single-event burnout on semiconductors has been known for over two decades, component manufacturers publish little related data. Through extensive testing, the authors have established trustworthy reliability figures and demonstrate that single-event burnout has a remarkably high impact on power converter failure rate. A standard testing method is proposed for improved power semiconductor qualification testing
Original languageEnglish
Title of host publicationProceedings of the 13th Power Electronics and Motion Control Conferenc (EPE/PEMC), 1-3 September 2008, Poznan, Poland
Place of PublicationPoznan, Poland
PublisherInstitute of Electrical and Electronics Engineers
Pages102-107
ISBN (Print)978-1-4244-1742-1
DOIs
Publication statusPublished - 2008
Event13th International Power Electronics and Motion Control Conference (EPE-PEMC 2008) - Poznań, Poland
Duration: 1 Sept 20083 Sept 2008
Conference number: 13
http://www.epe-pemc2008.put.poznan.pl/home_news.php

Conference

Conference13th International Power Electronics and Motion Control Conference (EPE-PEMC 2008)
Abbreviated titleEPE-PEMC 2008
Country/TerritoryPoland
CityPoznań
Period1/09/083/09/08
Internet address

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