An efficient simulation method for linking bipolar process and device optimization to circuit performance

G.A.M. Hurkx; P.G.M. Baltus; E.P.M. Bladt; M.P.G. Knuvers

doi:10.1109/IEDM.1993.347388

An efficient simulation method for linking bipolar process and device optimization to circuit performance

G.A.M. Hurkx
, P.G.M. Baltus
, E.P.M. Bladt
, M.P.G. Knuvers

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

Abstract

An efficient method of simulating process and geometry dependence of compact model parameters for circuit simulation is presented. It facilitates efficient bipolar process and device optimization with respect to circuit performance. The results of this scaling method are in good agreement with measurements.

Original language	English
Title of host publication	Proceedings of IEEE International Electron Devices Meeting
Publisher	Institute of Electrical and Electronics Engineers
Pages	105-108
Number of pages	4
ISBN (Print)	0780314506
DOIs	https://doi.org/10.1109/IEDM.1993.347388
Publication status	Published - 6 Aug 2002
Externally published	Yes
Event	1993 IEEE International Electron Devices Meeting, IEDM 1993 - Washington, United States Duration: 5 Dec 1993 → 8 Dec 1993

Conference

Conference	1993 IEEE International Electron Devices Meeting, IEDM 1993
Country/Territory	United States
City	Washington
Period	5/12/93 → 8/12/93

Access to Document

10.1109/IEDM.1993.347388

Cite this

Hurkx, G. A. M., Baltus, P. G. M., Bladt, E. P. M., & Knuvers, M. P. G. (2002). An efficient simulation method for linking bipolar process and device optimization to circuit performance. In Proceedings of IEEE International Electron Devices Meeting (pp. 105-108). Article 347388 Institute of Electrical and Electronics Engineers. https://doi.org/10.1109/IEDM.1993.347388

@inproceedings{8978a1f377cc4dcd9add463b29e0419d,

title = "An efficient simulation method for linking bipolar process and device optimization to circuit performance",

abstract = "An efficient method of simulating process and geometry dependence of compact model parameters for circuit simulation is presented. It facilitates efficient bipolar process and device optimization with respect to circuit performance. The results of this scaling method are in good agreement with measurements.",

author = "G.A.M. Hurkx and P.G.M. Baltus and E.P.M. Bladt and M.P.G. Knuvers",

year = "2002",

month = aug,

day = "6",

doi = "10.1109/IEDM.1993.347388",

language = "English",

isbn = "0780314506",

pages = "105--108",

booktitle = "Proceedings of IEEE International Electron Devices Meeting",

publisher = "Institute of Electrical and Electronics Engineers",

address = "United States",

note = "1993 IEEE International Electron Devices Meeting, IEDM 1993 ; Conference date: 05-12-1993 Through 08-12-1993",

}

Hurkx, GAM, Baltus, PGM, Bladt, EPM & Knuvers, MPG 2002, An efficient simulation method for linking bipolar process and device optimization to circuit performance. in Proceedings of IEEE International Electron Devices Meeting., 347388, Institute of Electrical and Electronics Engineers, pp. 105-108, 1993 IEEE International Electron Devices Meeting, IEDM 1993, Washington, Washington, United States, 5/12/93. https://doi.org/10.1109/IEDM.1993.347388

An efficient simulation method for linking bipolar process and device optimization to circuit performance. / Hurkx, G.A.M.; Baltus, P.G.M.; Bladt, E.P.M. et al.
Proceedings of IEEE International Electron Devices Meeting. Institute of Electrical and Electronics Engineers, 2002. p. 105-108 347388.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - An efficient simulation method for linking bipolar process and device optimization to circuit performance

AU - Hurkx, G.A.M.

AU - Baltus, P.G.M.

AU - Bladt, E.P.M.

AU - Knuvers, M.P.G.

PY - 2002/8/6

Y1 - 2002/8/6

N2 - An efficient method of simulating process and geometry dependence of compact model parameters for circuit simulation is presented. It facilitates efficient bipolar process and device optimization with respect to circuit performance. The results of this scaling method are in good agreement with measurements.

AB - An efficient method of simulating process and geometry dependence of compact model parameters for circuit simulation is presented. It facilitates efficient bipolar process and device optimization with respect to circuit performance. The results of this scaling method are in good agreement with measurements.

UR - https://www.scopus.com/pages/publications/0027880064

U2 - 10.1109/IEDM.1993.347388

DO - 10.1109/IEDM.1993.347388

M3 - Conference contribution

SN - 0780314506

SP - 105

EP - 108

BT - Proceedings of IEEE International Electron Devices Meeting

PB - Institute of Electrical and Electronics Engineers

T2 - 1993 IEEE International Electron Devices Meeting, IEDM 1993

Y2 - 5 December 1993 through 8 December 1993

ER -

An efficient simulation method for linking bipolar process and device optimization to circuit performance

Abstract

Conference

Access to Document

Other files and links

Fingerprint

Cite this