An E-band silicon-IC-to-waveguide contactless transition incorporating a low-loss spatial power combiner

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Abstract

A novel contactless transition from a (Bi)CMOS Silicon IC (p-doped substrate) to a metal waveguide in E-Band is presented. This transition also incorporates a spatial power combiner in air to enable direct electromagnetic coupling from an array of on-chip microstrip transmission lines to a single waveguide mode, and vice versa. The transition is relatively low loss and is particularly suitable for high-power mm-wave applications. The simulated return loss of a four-channel passive back-to-back transition is better than 10 dB over the frequency band ranging from 60–90 GHz (E-Band). The average insertion loss of a single transition is 1.31 dB over the entire E-Band.
Original languageEnglish
Title of host publication2018 IEEE Asia-Pacific Microwave Conference, APMC
Place of PublicationPiscataway
PublisherInstitute of Electrical and Electronics Engineers
Pages1528-1530
Number of pages3
ISBN (Electronic)978-4-9023-3945-1
DOIs
Publication statusPublished - 16 Jan 2019
Event30th Asia-Pacific Microwave Conference, APMC 2018 - Kyoto, Japan
Duration: 6 Nov 20189 Nov 2018

Conference

Conference30th Asia-Pacific Microwave Conference, APMC 2018
CountryJapan
CityKyoto
Period6/11/189/11/18

Keywords

  • E-Band
  • Electromagnetic coupling
  • Millimeter wave integrated circuits (MMIC)
  • Power combiners
  • Waveguide transitions

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