An atomically resolved study of InGaAs quantum dot layers grown with an indium flush step

J.G. Keizer, E.C. Clark, M. Bichler, G. Abstreiter, J.J. Finley, P.M. Koenraad

Research output: Contribution to journalArticleAcademicpeer-review

15 Citations (Scopus)
2 Downloads (Pure)

Abstract

In this cross-sectional scanning tunnelling microscopy study we investigate the indium flush method as a means to control the height of self-assembled InGaAs quantum dots and wetting layers. The results show that application of an indium flush step during growth results in flattened dots and a reduced wetting layer of which the height can be precisely controlled by varying the height of the first capping layer. © 2010 IOP Publishing Ltd. U7 - Export Date: 2 August 2010 U7 - Source: Scopus U7 - Art. No.: 215705
Original languageEnglish
Article number215705
Pages (from-to)215705-1/4
Number of pages4
JournalNanotechnology
Volume21
Issue number21
DOIs
Publication statusPublished - 2010

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