An atomically resolved study of InGaAs quantum dot layers grown with an indium flush step

J.G. Keizer; E.C. Clark; M. Bichler; G. Abstreiter; J.J. Finley; P.M. Koenraad

doi:10.1088/0957-4484/21/21/215705

An atomically resolved study of InGaAs quantum dot layers grown with an indium flush step

J.G. Keizer, E.C. Clark, M. Bichler, G. Abstreiter, J.J. Finley, P.M. Koenraad

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Abstract

In this cross-sectional scanning tunnelling microscopy study we investigate the indium flush method as a means to control the height of self-assembled InGaAs quantum dots and wetting layers. The results show that application of an indium flush step during growth results in flattened dots and a reduced wetting layer of which the height can be precisely controlled by varying the height of the first capping layer. © 2010 IOP Publishing Ltd. U7 - Export Date: 2 August 2010 U7 - Source: Scopus U7 - Art. No.: 215705

Original language	English
Article number	215705
Pages (from-to)	215705-1/4
Number of pages	4
Journal	Nanotechnology
Volume	21
Issue number	21
DOIs	https://doi.org/10.1088/0957-4484/21/21/215705
Publication status	Published - 2010

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abstract = "In this cross-sectional scanning tunnelling microscopy study we investigate the indium flush method as a means to control the height of self-assembled InGaAs quantum dots and wetting layers. The results show that application of an indium flush step during growth results in flattened dots and a reduced wetting layer of which the height can be precisely controlled by varying the height of the first capping layer. {\textcopyright} 2010 IOP Publishing Ltd. U7 - Export Date: 2 August 2010 U7 - Source: Scopus U7 - Art. No.: 215705",

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AU - Finley, J.J.

AU - Koenraad, P.M.

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AB - In this cross-sectional scanning tunnelling microscopy study we investigate the indium flush method as a means to control the height of self-assembled InGaAs quantum dots and wetting layers. The results show that application of an indium flush step during growth results in flattened dots and a reduced wetting layer of which the height can be precisely controlled by varying the height of the first capping layer. © 2010 IOP Publishing Ltd. U7 - Export Date: 2 August 2010 U7 - Source: Scopus U7 - Art. No.: 215705

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An atomically resolved study of InGaAs quantum dot layers grown with an indium flush step

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