An approach to lifetime estimation of SiC MOSFETs subjected to thermal stress

R. ten Have; B.J.D. Vermulst; J. Duivenbode, van

An approach to lifetime estimation of SiC MOSFETs subjected to thermal stress

R. ten Have, B.J.D. Vermulst, J. Duivenbode, van

Research output: Contribution to conference › Poster

7 Downloads (Pure)

Original language	English
Publication status	Published - 2015

Bibliographical note

International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management (PCIM Europe 2015), 19-21 May 2015, Nuremberg

Cite this

@conference{d06c4c090ae045a893a2c330e97a9119,

title = "An approach to lifetime estimation of SiC MOSFETs subjected to thermal stress",

author = "{ten Have}, R. and B.J.D. Vermulst and {Duivenbode, van}, J.",

note = "International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management (PCIM Europe 2015), 19-21 May 2015, Nuremberg",

year = "2015",

language = "English",

}