We have developed a new layer stack based on the integration of active and passive devices in InGaAsP/InP using a MOVPE re-growth technique. The high quality of the new stack is shown by the performance of an all-optical wavelength converter. The converted wavelength showed a static extinction ratio of 33 dB and a -1.5 dB power penalty in 2.5 Gb/s BER measurements. No error floor was detected.
|Conference||conference; IPR'02, Vancouver, Canada; 2002-07-14; 2002-07-17|
|Period||14/07/02 → 17/07/02|
|Other||IPR'02, Vancouver, Canada|