An Accurate Characterization Method for Integrated Polarization Converters

Sander Reniers; Kevin A. Williams; Jos J.G.M. van der Tol; Yuqing Jiao

doi:10.1109/JQE.2020.3047119

An Accurate Characterization Method for Integrated Polarization Converters

Sander Reniers (Corresponding author), Kevin A. Williams, Jos J.G.M. van der Tol, Yuqing Jiao

Photonic Integration

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Abstract

We present a characterization method for polarization converters which improves the accuracy of traditional characterization methods significantly. An experimental demonstration of the method is presented on the InP-membrane-on-silicon (IMOS) platform. The design and fabrication of the polarization converter is discussed, as well as the simulated polarization conversion efficiency. A device of only 4 microns is shown to achieve 97.5%±0.5% polarization conversion, corresponding to an extinction ratio of -16±0.9 dB. The traditional characterization method is compared to the new 4-port method, and the accuracy is improved from up to 20% to 0.5%.

Original language	English
Article number	0600306
Number of pages	6
Journal	IEEE Journal of Quantum Electronics
Volume	57
Issue number	1
DOIs	https://doi.org/10.1109/JQE.2020.3047119
Publication status	Published - Feb 2021

Keywords

Photonic integrated circuits
nanophotonics
photonic crystals
polarization
polarization converters
Couplers
Insertion loss
Silicon nitride
Loss measurement
Gratings
III-V semiconductor materials
Indium phosphide

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10.1109/JQE.2020.3047119

JQE-135580-2020.R1Final author version , 17.6 MB
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title = "An Accurate Characterization Method for Integrated Polarization Converters",

abstract = "We present a characterization method for polarization converters which improves the accuracy of traditional characterization methods significantly. An experimental demonstration of the method is presented on the InP-membrane-on-silicon (IMOS) platform. The design and fabrication of the polarization converter is discussed, as well as the simulated polarization conversion efficiency. A device of only 4 microns is shown to achieve 97.5%±0.5% polarization conversion, corresponding to an extinction ratio of -16±0.9 dB. The traditional characterization method is compared to the new 4-port method, and the accuracy is improved from up to 20% to 0.5%.",

keywords = "Photonic integrated circuits, nanophotonics, photonic crystals, polarization, polarization converters, Couplers, Insertion loss, Silicon nitride, Loss measurement, Gratings, III-V semiconductor materials, Indium phosphide",

author = "Sander Reniers and Williams, {Kevin A.} and {van der Tol}, {Jos J.G.M.} and Yuqing Jiao",

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doi = "10.1109/JQE.2020.3047119",

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T1 - An Accurate Characterization Method for Integrated Polarization Converters

AU - Reniers, Sander

AU - Williams, Kevin A.

AU - van der Tol, Jos J.G.M.

AU - Jiao, Yuqing

PY - 2021/2

Y1 - 2021/2

N2 - We present a characterization method for polarization converters which improves the accuracy of traditional characterization methods significantly. An experimental demonstration of the method is presented on the InP-membrane-on-silicon (IMOS) platform. The design and fabrication of the polarization converter is discussed, as well as the simulated polarization conversion efficiency. A device of only 4 microns is shown to achieve 97.5%±0.5% polarization conversion, corresponding to an extinction ratio of -16±0.9 dB. The traditional characterization method is compared to the new 4-port method, and the accuracy is improved from up to 20% to 0.5%.

AB - We present a characterization method for polarization converters which improves the accuracy of traditional characterization methods significantly. An experimental demonstration of the method is presented on the InP-membrane-on-silicon (IMOS) platform. The design and fabrication of the polarization converter is discussed, as well as the simulated polarization conversion efficiency. A device of only 4 microns is shown to achieve 97.5%±0.5% polarization conversion, corresponding to an extinction ratio of -16±0.9 dB. The traditional characterization method is compared to the new 4-port method, and the accuracy is improved from up to 20% to 0.5%.

KW - Photonic integrated circuits

KW - nanophotonics

KW - photonic crystals

KW - polarization

KW - polarization converters

KW - Couplers

KW - Insertion loss

KW - Silicon nitride

KW - Loss measurement

KW - Gratings

KW - III-V semiconductor materials

KW - Indium phosphide

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DO - 10.1109/JQE.2020.3047119

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JO - IEEE Journal of Quantum Electronics

JF - IEEE Journal of Quantum Electronics

SN - 0018-9197

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An Accurate Characterization Method for Integrated Polarization Converters

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