Abstract
We present a characterization method for polarization converters which improves the accuracy of traditional characterization methods significantly. An experimental demonstration of the method is presented on the InP-membrane-on-silicon (IMOS) platform. The design and fabrication of the polarization converter is discussed, as well as the simulated polarization conversion efficiency. A device of only 4 microns is shown to achieve 97.5%±0.5% polarization conversion, corresponding to an extinction ratio of -16±0.9 dB. The traditional characterization method is compared to the new 4-port method, and the accuracy is improved from up to 20% to 0.5%.
Original language | English |
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Article number | 0600306 |
Number of pages | 6 |
Journal | IEEE Journal of Quantum Electronics |
Volume | 57 |
Issue number | 1 |
DOIs | |
Publication status | Published - Feb 2021 |
Keywords
- Photonic integrated circuits
- nanophotonics
- photonic crystals
- polarization
- polarization converters
- Couplers
- Insertion loss
- Silicon nitride
- Loss measurement
- Gratings
- III-V semiconductor materials
- Indium phosphide