An Accurate Characterization Method for Integrated Polarization Converters

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Abstract

We present a characterization method for polarization converters which improves the accuracy of traditional characterization methods significantly. An experimental demonstration of the method is presented on the InP-membrane-on-silicon (IMOS) platform. The design and fabrication of the polarization converter is discussed, as well as the simulated polarization conversion efficiency. A device of only 4 microns is shown to achieve 97.5%±0.5% polarization conversion, corresponding to an extinction ratio of -16±0.9 dB. The traditional characterization method is compared to the new 4-port method, and the accuracy is improved from up to 20% to 0.5%.
Original languageEnglish
Article number 0600306
Number of pages6
JournalIEEE Journal of Quantum Electronics
Volume57
Issue number1
DOIs
Publication statusPublished - Feb 2021

Keywords

  • Photonic integrated circuits
  • nanophotonics
  • photonic crystals
  • polarization
  • polarization converters
  • Couplers
  • Insertion loss
  • Silicon nitride
  • Loss measurement
  • Gratings
  • III-V semiconductor materials
  • Indium phosphide

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