An Accurate Characterization Method for Integrated Polarization Converters

Sander Reniers; Kevin A. Williams; Yuqing Jiao; Jos J.G.M. van der Tol

An Accurate Characterization Method for Integrated Polarization Converters

Sander Reniers (Corresponding author), Kevin A. Williams, Yuqing Jiao, Jos J.G.M. van der Tol

Photonic Integration

Research output: Contribution to journal › Article › Academic › peer-review

Abstract

We present a characterization method for polarization converters which improves the accuracy of traditional characterization methods significantly. An experimental demonstration of the method is presented on the InP-membrane-on-silicon (IMOS) platform. The design and fabrication of the polarization converter is discussed, as well as the simulated polarization conversion efficiency. A device of only 4 microns is shown to achieve 97.5%±0.5% polarization conversion, corresponding to an extinction ratio of -16±0.9 dB. The traditional characterization method is compared to the new 4-port method, and the accuracy is improved from up to 20% to 0.5%.

Original language	English
Journal	IEEE Journal of Quantum Electronics
Volume	XX
Issue number	XX
Publication status	Accepted/In press - 2 Jan 2021

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@article{450b7e98c21740bb85a5bcf7d3b11927,

title = "An Accurate Characterization Method for Integrated Polarization Converters",

abstract = "We present a characterization method for polarization converters which improves the accuracy of traditional characterization methods significantly. An experimental demonstration of the method is presented on the InP-membrane-on-silicon (IMOS) platform. The design and fabrication of the polarization converter is discussed, as well as the simulated polarization conversion efficiency. A device of only 4 microns is shown to achieve 97.5%±0.5% polarization conversion, corresponding to an extinction ratio of -16±0.9 dB. The traditional characterization method is compared to the new 4-port method, and the accuracy is improved from up to 20% to 0.5%.",

author = "Sander Reniers and Williams, {Kevin A.} and Yuqing Jiao and {van der Tol}, {Jos J.G.M.}",

year = "2021",

month = jan,

day = "2",

language = "English",

volume = "XX",

journal = "IEEE Journal of Quantum Electronics",

issn = "0018-9197",

publisher = "Institute of Electrical and Electronics Engineers",

number = "XX",

}

TY - JOUR

T1 - An Accurate Characterization Method for Integrated Polarization Converters

AU - Reniers, Sander

AU - Williams, Kevin A.

AU - Jiao, Yuqing

AU - van der Tol, Jos J.G.M.

PY - 2021/1/2

Y1 - 2021/1/2

N2 - We present a characterization method for polarization converters which improves the accuracy of traditional characterization methods significantly. An experimental demonstration of the method is presented on the InP-membrane-on-silicon (IMOS) platform. The design and fabrication of the polarization converter is discussed, as well as the simulated polarization conversion efficiency. A device of only 4 microns is shown to achieve 97.5%±0.5% polarization conversion, corresponding to an extinction ratio of -16±0.9 dB. The traditional characterization method is compared to the new 4-port method, and the accuracy is improved from up to 20% to 0.5%.

AB - We present a characterization method for polarization converters which improves the accuracy of traditional characterization methods significantly. An experimental demonstration of the method is presented on the InP-membrane-on-silicon (IMOS) platform. The design and fabrication of the polarization converter is discussed, as well as the simulated polarization conversion efficiency. A device of only 4 microns is shown to achieve 97.5%±0.5% polarization conversion, corresponding to an extinction ratio of -16±0.9 dB. The traditional characterization method is compared to the new 4-port method, and the accuracy is improved from up to 20% to 0.5%.

M3 - Article

VL - XX

JO - IEEE Journal of Quantum Electronics

JF - IEEE Journal of Quantum Electronics

SN - 0018-9197

IS - XX

ER -