An a-IGZO asynchronous delta-sigma modulator on foil achieving up to 43dB SNR and 40dB SNDR in 300Hz bandwidth

C. Garripoli, J.L.J.P. van der Steen, E. Smits, G.H. Gelinck, A.H.M. van Roermund, E. Cantatore

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

17 Citations (Scopus)
3 Downloads (Pure)

Abstract

Amorphous IGZO (a-IGZO) TFTs fabricated on flexible large-area substrates provide better mobility than a-Si or organic counterparts and good uniformity. These features make a-IGZO TFTs an attractive technology for large-area sensing (e.g. strain, pressure, IR), low-cost RFIDs augmented with sensors and monitoring of biopotentials. In this context, it is crucial to accurately transform analogue sensor signals in a robust representation. The most common choice is a synchronous digital word, but a two-level PWM representation is another interesting possibility. Binary PWM can be transmitted on wire or via RF amplitude modulation with high immunity to noise and interferers.

Original languageEnglish
Title of host publication2017 IEEE International Solid-State Circuits Conference (ISSCC), 5-9 February 2017, San Francisco, California
Place of PublicationPiscataway
PublisherInstitute of Electrical and Electronics Engineers
Pages260-261
Number of pages2
ISBN (Electronic)978-1-5090-3758-2
ISBN (Print)978-1-5090-3759-9
DOIs
Publication statusPublished - 2 Mar 2017
Event64th IEEE International Solid-State Circuits Conference (ISSCC 2017) - San Francisco, United States
Duration: 5 Feb 20179 Feb 2017
Conference number: 61

Conference

Conference64th IEEE International Solid-State Circuits Conference (ISSCC 2017)
Abbreviated titleISSCC 2017
CountryUnited States
CitySan Francisco
Period5/02/179/02/17

Fingerprint Dive into the research topics of 'An a-IGZO asynchronous delta-sigma modulator on foil achieving up to 43dB SNR and 40dB SNDR in 300Hz bandwidth'. Together they form a unique fingerprint.

Cite this