Amplified spontaneous emission spectroscopy on semiconductor optical amplifiers subject to active light injection

A.P. Boer, de; P.C.M. Christianen; J.C. Maan; T.H.M. Rasing; V.I. Tolstikhin; T.G. Roer, van de; H.M. Vrieze, de

doi:10.1063/1.121499

Amplified spontaneous emission spectroscopy on semiconductor optical amplifiers subject to active light injection

A.P. Boer, de, P.C.M. Christianen, J.C. Maan, T.H.M. Rasing, V.I. Tolstikhin, T.G. Roer, van de, H.M. Vrieze, de

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Abstract

It is shown that measurements of the effect of optical injection with an external laser on the spectral response of a semiconductor optical amplifier can probe intrinsic properties of a working device. The data demonstrate that under saturated gain conditions the carrier energy distribution within the active layer of a AlGaAs/GaAs amplifier neither shows spectral hole burning nor carrier heating, but only a decreased density.

Original language	English
Pages (from-to)	2936-2938
Number of pages	3
Journal	Applied Physics Letters
Volume	72
Issue number	23
DOIs	https://doi.org/10.1063/1.121499
Publication status	Published - 1998

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title = "Amplified spontaneous emission spectroscopy on semiconductor optical amplifiers subject to active light injection",

abstract = "It is shown that measurements of the effect of optical injection with an external laser on the spectral response of a semiconductor optical amplifier can probe intrinsic properties of a working device. The data demonstrate that under saturated gain conditions the carrier energy distribution within the active layer of a AlGaAs/GaAs amplifier neither shows spectral hole burning nor carrier heating, but only a decreased density.",

author = "{Boer, de}, A.P. and P.C.M. Christianen and J.C. Maan and T.H.M. Rasing and V.I. Tolstikhin and {Roer, van de}, T.G. and {Vrieze, de}, H.M.",

year = "1998",

doi = "10.1063/1.121499",

language = "English",

volume = "72",

pages = "2936--2938",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "23",

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TY - JOUR

T1 - Amplified spontaneous emission spectroscopy on semiconductor optical amplifiers subject to active light injection

AU - Boer, de, A.P.

AU - Christianen, P.C.M.

AU - Maan, J.C.

AU - Rasing, T.H.M.

AU - Tolstikhin, V.I.

AU - Roer, van de, T.G.

AU - Vrieze, de, H.M.

PY - 1998

Y1 - 1998

N2 - It is shown that measurements of the effect of optical injection with an external laser on the spectral response of a semiconductor optical amplifier can probe intrinsic properties of a working device. The data demonstrate that under saturated gain conditions the carrier energy distribution within the active layer of a AlGaAs/GaAs amplifier neither shows spectral hole burning nor carrier heating, but only a decreased density.

AB - It is shown that measurements of the effect of optical injection with an external laser on the spectral response of a semiconductor optical amplifier can probe intrinsic properties of a working device. The data demonstrate that under saturated gain conditions the carrier energy distribution within the active layer of a AlGaAs/GaAs amplifier neither shows spectral hole burning nor carrier heating, but only a decreased density.

U2 - 10.1063/1.121499

DO - 10.1063/1.121499

M3 - Article

SN - 0003-6951

VL - 72

SP - 2936

EP - 2938

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 23

ER -

Amplified spontaneous emission spectroscopy on semiconductor optical amplifiers subject to active light injection

Abstract

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