Amorphous silicon photovoltaic devices and method of making thereof

R.E.I. Schropp

Amorphous silicon photovoltaic devices and method of making thereof

R.E.I. Schropp (Inventor)

Research output: Patent › Patent publication

Abstract

A thin film semiconductor solar cell comprising: a p-layer consisting of at least 3 sublayers in which either the optical band gap, the specific conductivity, or both are spatially varied in a controlled way; or a n-layer consisting of at least 2 sublayers in which either the optical band gap, the specific conductivity, or both are spatially varied in a controlled way; or comprising both the p-layer and the n-layer as above specified.

Original language	English
Patent number	EP0886325
IPC	H01L 31/ 20 A I
Priority date	18/06/97
Publication status	Published - 23 Dec 1998
Externally published	Yes

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Cite this

@misc{0437af9980284cf1a7e8f7c4fb5aaa24,

title = "Amorphous silicon photovoltaic devices and method of making thereof",

abstract = "A thin film semiconductor solar cell comprising: a p-layer consisting of at least 3 sublayers in which either the optical band gap, the specific conductivity, or both are spatially varied in a controlled way; or a n-layer consisting of at least 2 sublayers in which either the optical band gap, the specific conductivity, or both are spatially varied in a controlled way; or comprising both the p-layer and the n-layer as above specified. ",

author = "R.E.I. Schropp",

year = "1998",

month = dec,

day = "23",

language = "English",

type = "Patent",

note = "EP0886325; H01L 31/ 20 A I",

}

TY - PAT

T1 - Amorphous silicon photovoltaic devices and method of making thereof

AU - Schropp, R.E.I.

PY - 1998/12/23

Y1 - 1998/12/23

N2 - A thin film semiconductor solar cell comprising: a p-layer consisting of at least 3 sublayers in which either the optical band gap, the specific conductivity, or both are spatially varied in a controlled way; or a n-layer consisting of at least 2 sublayers in which either the optical band gap, the specific conductivity, or both are spatially varied in a controlled way; or comprising both the p-layer and the n-layer as above specified.

AB - A thin film semiconductor solar cell comprising: a p-layer consisting of at least 3 sublayers in which either the optical band gap, the specific conductivity, or both are spatially varied in a controlled way; or a n-layer consisting of at least 2 sublayers in which either the optical band gap, the specific conductivity, or both are spatially varied in a controlled way; or comprising both the p-layer and the n-layer as above specified.

M3 - Patent publication

M1 - EP0886325

ER -

Amorphous silicon photovoltaic devices and method of making thereof

Abstract

UN SDGs

Fingerprint

Cite this