Ambipolar charge transport in organic field-effect transistors

E.C.P. Smits, T.D. Anthopoulos, S. Setayesh, E. Veenendaal, van, R. Coehoorn, P.W.M. Blom, B. Boer, de, D.M. Leeuw, de

Research output: Contribution to journalArticleAcademicpeer-review

146 Citations (Scopus)
161 Downloads (Pure)

Abstract

A model describing charge transport in disordered ambipolar organic field-effect transistors is presented. The basis of this model is the variable-range hopping in an exponential density of states developed for disordered unipolar organic transistors. We show that the model can be used to calculate all regimes in unipolar as well as ambipolar organic transistors, by applying it to experimental data obtained from ambipolar organic transistors based on a narrow-gap organic molecule. The threshold voltage was determined independently from metal insulator semiconductor diode measurements. An excellent agreement between theory and experiment is observed over a wide range of biasing regimes and temperatures
Original languageEnglish
Article number205316
Pages (from-to)205316-1/9
Number of pages9
JournalPhysical Review B
Volume73
Issue number20
DOIs
Publication statusPublished - 2006

Fingerprint Dive into the research topics of 'Ambipolar charge transport in organic field-effect transistors'. Together they form a unique fingerprint.

Cite this