Aluminum oxide and other ALD materials for Si surface passivation

G. Dingemans; W.M.M. Kessels

doi:10.1149/1.3633680

Aluminum oxide and other ALD materials for Si surface passivation

G. Dingemans, W.M.M. Kessels

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

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Abstract

The high level of passivation of Si surfaces afforded by Al2O3 synthesized by atomic layer deposition (ALD) was the incentive to test.

Original language	English
Title of host publication	Atomic Layer Deposition Applications 7
Editors	J. Elam, S. De Gendt, A. Londergan, S. Bent, xx et al.
Pages	293-301
DOIs	https://doi.org/10.1149/1.3633680
Publication status	Published - 2011
Event	220th Electrochemical Society Meeting (ECS 2011) - Westin Boston Waterfront and The Boston Convention/Exhibition Center, Boston, United States Duration: 1 Jan 2011 → … Conference number: 220 https://www.electrochem.org/220

Publication series

Name	ECS Transactions
Volume	41
ISSN (Print)	1938-6737

Conference

Conference	220th Electrochemical Society Meeting (ECS 2011)
Abbreviated title	ECS 2011
Country/Territory	United States
City	Boston
Period	1/01/11 → …
Other	Electrochemical Society Meeting Boston (USA), October 2011
Internet address	https://www.electrochem.org/220

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10.1149/1.3633680

Cite this

@inproceedings{40bd67d8bf704c3e92e57bd6cf2cb93d,

title = "Aluminum oxide and other ALD materials for Si surface passivation",

abstract = "The high level of passivation of Si surfaces afforded by Al2O3 synthesized by atomic layer deposition (ALD) was the incentive to test.",

author = "G. Dingemans and W.M.M. Kessels",

year = "2011",

doi = "10.1149/1.3633680",

language = "English",

series = "ECS Transactions",

pages = "293--301",

editor = "J. Elam and {De Gendt}, S. and A. Londergan and S. Bent and {et al.}, xx",

booktitle = "Atomic Layer Deposition Applications 7",

note = "220th Electrochemical Society Meeting (ECS 2011), ECS 2011 ; Conference date: 01-01-2011",

url = "https://www.electrochem.org/220",

}

Dingemans, G & Kessels, WMM 2011, Aluminum oxide and other ALD materials for Si surface passivation. in J Elam, S De Gendt, A Londergan, S Bent & X et al. (eds), Atomic Layer Deposition Applications 7. ECS Transactions, vol. 41, pp. 293-301, 220th Electrochemical Society Meeting (ECS 2011), Boston, Massachusetts, United States, 1/01/11. https://doi.org/10.1149/1.3633680

TY - GEN

T1 - Aluminum oxide and other ALD materials for Si surface passivation

AU - Dingemans, G.

AU - Kessels, W.M.M.

N1 - Conference code: 220

PY - 2011

Y1 - 2011

N2 - The high level of passivation of Si surfaces afforded by Al2O3 synthesized by atomic layer deposition (ALD) was the incentive to test.

AB - The high level of passivation of Si surfaces afforded by Al2O3 synthesized by atomic layer deposition (ALD) was the incentive to test.

U2 - 10.1149/1.3633680

DO - 10.1149/1.3633680

M3 - Conference contribution

T3 - ECS Transactions

SP - 293

EP - 301

BT - Atomic Layer Deposition Applications 7

A2 - Elam, J.

A2 - De Gendt, S.

A2 - Londergan, A.

A2 - Bent, S.

A2 - et al., xx

T2 - 220th Electrochemical Society Meeting (ECS 2011)

Y2 - 1 January 2011

ER -

Aluminum oxide and other ALD materials for Si surface passivation

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