Aluminum oxide and other ALD materials for Si surface passivation

G. Dingemans, W.M.M. Kessels

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

31 Citations (Scopus)
2 Downloads (Pure)


The high level of passivation of Si surfaces afforded by Al2O3 synthesized by atomic layer deposition (ALD) was the incentive to test.
Original languageEnglish
Title of host publicationAtomic Layer Deposition Applications 7
EditorsJ. Elam, S. De Gendt, A. Londergan, S. Bent, xx et al.
Publication statusPublished - 2011
Event220th Electrochemical Society Meeting (ECS 2011) - Westin Boston Waterfront and The Boston Convention/Exhibition Center, Boston, United States
Duration: 1 Jan 2011 → …
Conference number: 220

Publication series

NameECS Transactions
ISSN (Print)1938-6737


Conference220th Electrochemical Society Meeting (ECS 2011)
Abbreviated titleECS 2011
Country/TerritoryUnited States
Period1/01/11 → …
OtherElectrochemical Society Meeting Boston (USA), October 2011
Internet address


Dive into the research topics of 'Aluminum oxide and other ALD materials for Si surface passivation'. Together they form a unique fingerprint.

Cite this