Alternative technology concepts for low-cost and high-speed 2D and 3D interconnect manufacturing

F. Roozeboom, M. Smets, B. Kniknie, M. Hoppenbrouwers, G. Dingemans, W. Keuning, W.M.M. Kessels, Ralph Pohl, A.J. Huis In't Veld

Research output: Contribution to conferencePaperAcademic

1 Citation (Scopus)

Abstract

The current industrial process of choice for Deep Reactive Ion Etching (DRIE) of 3D features, e.g. Through-Silicon Vias (TSVs), Microelectromechanical Systems (MEMS), etc., is the Bosch process, which uses alternative SF 6 etch cycles and C4F8-based sidewall passivation cycles in a time-sequenced mode. An alternative, potentially faster and more accurate process is to have wafers pass under spatially-divided reaction zones, which are individually separated by so-called N2-gas bearings 'curtains' of heights down to 10-20 μm. In addition, the feature sidewalls can be protected by replacing the C4F8-based sidewall passivation cycles by cycles forming chemisorbed and highly uniform passivation layers of A12O3 or SiO2 deposited by Atomic Layer Deposition (ALD), also in a spatially-divided mode. ALD is performed either in thermal mode, or plasma-assisted mode in order to achieve near room-temperature processing. For metal filling of 3D-etched TSVs, or for deposition of 2D metal conductor lines one can use Laser-Induced Forward Transfer (LIFT) of metals. LIFT is a maskless, 'solvent'-free deposition method, utilizing different types of pulsed lasers to deposit thin material (e.g. Cu, Au, Al, Cr) layers with um-range resolution from a transparent carrier (ribbon) onto a close-by acceptor substrate. It is a dry, single-step, room temperature process in air, suitable for different types of interconnect fabrication, e.g. TSV filling and redistribution layers (RDL), without the use of wet chemistry.

Original languageEnglish
Pages1-6
Number of pages6
Publication statusPublished - 1 Jan 2013
Event46th Annual IMAPS International Symposium on Microelectronics (IMAPS 2013) - Orlando, FL, United States
Duration: 30 Sep 20133 Oct 2013
Conference number: 46

Conference

Conference46th Annual IMAPS International Symposium on Microelectronics (IMAPS 2013)
Abbreviated titleIMAPS 2013
CountryUnited States
CityOrlando, FL
Period30/09/133/10/13

Keywords

  • 3D interconnect
  • ALD oxide passivation
  • Laser-Induced Forward Transfer
  • Redistribution layers
  • Spatially-divided Deep Reactive Ion Etching
  • TSV drilling and filling

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