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Alternative for the quantum inductance model in double-barrier resonant-tunneling

  • H.J.M.F. Noteborn
  • , H.P. Joosten
  • , K. Kaski
  • , D. Lenstra

Research output: Contribution to journalArticleAcademicpeer-review

Abstract

A theoretical justification for the phenomenological equivalent circuit approach in Double-Barrier Resonant Tunneling (DBRT) is given. Starting from the combined Schrödinger and Poisson equations for the static behaviour of the DBRT diode, we arrive through a small signal analysis at a model for the dynamics. This model corresponds to an equivalent circuit consisting of two linked RC-sections. The simple equivalent circuits in which the DBRT structure is represented by a capacitor with parallel resistor, as well as more complicated circuits including a quantum inductance can all be considered special cases of our model. Furthermore, by studying the regions of stability in the phase diagrams resulting from our model, the effect of a parallel capacitor on the stability is investigated.

Original languageEnglish
Pages (from-to)153-157
Number of pages5
JournalSuperlattices and Microstructures
Volume13
Issue number2
DOIs
Publication statusPublished - Mar 1993

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