All-polymer ferroelectric transistors

G. H. Gelinck, A. W. Marsman, F. J. Touwslager, S. Setayesh, D. M. De Leeuw, R.C.G. Naber, P.W.M. Blom

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Abstract

We demonstrate thin-film ferroelectric transistors, made entirely from organic materials that are processed from solution. The devices consist of thin ferroelectric poly(vinylidene fluoride/trifluoroethylene) films sandwiched between electrodes made of conducting poly(3,4-ethylenedioxythiophene) stabilized with polystyrene-4-sulphonic acid. On top of this stack, an organic semiconductor is applied. The ferroelectric transistors, constructed using unipolar p - or n -type semiconductor channels, have remnant current modulations of ∼ 103 with a retention time of hours. They can be switched in 0.1-1 ms at operating voltages less than 10 V.

Original languageEnglish
Article number092903
Number of pages3
JournalApplied Physics Letters
Volume87
Issue number9
DOIs
Publication statusPublished - 29 Aug 2005
Externally publishedYes

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    Gelinck, G. H., Marsman, A. W., Touwslager, F. J., Setayesh, S., De Leeuw, D. M., Naber, R. C. G., & Blom, P. W. M. (2005). All-polymer ferroelectric transistors. Applied Physics Letters, 87(9), [092903]. https://doi.org/10.1063/1.2035324