TY - JOUR
T1 - All-oxide MoOx/SnOx charge recombination interconnects for inverted organic tandem solar cells
AU - Becker, Tim
AU - Trost, Sara
AU - Behrendt, Andreas
AU - Shutsko, Ivan
AU - Polywka, Andreas
AU - Görrn, Patrick
AU - Reckers, Philip
AU - Das, Chittaranjan
AU - Mayer, Thomas
AU - Di Carlo Rasi, Dario
AU - Hendriks, Koen H.
AU - Wienk, Martijn M.
AU - Janssen, René A.J.
AU - Riedl, Thomas
PY - 2018/4/5
Y1 - 2018/4/5
N2 - Multijunction solar cells are designed to improve the overlap with the solar spectrum and to minimize losses due to thermalization. Aside from the optimum choice of photoactive materials for the respective sub-cells, a proper interconnect is essential. This study demonstrates a novel all-oxide interconnect based on the interface of the high-work-function (WF) metal oxide MoOx and low-WF tin oxide (SnOx). In contrast to typical p-/n-type tunnel junctions, both the oxides are n-type semiconductors with a WF of 5.2 and 4.2 eV, respectively. It is demonstrated that the electronic line-up at the interface of MoOx and SnOx comprises a large intrinsic interface dipole (≈0.8 eV), which is key to afford ideal alignment of the conduction band of MoOx and SnOx, without the requirement of an additional metal or organic dipole layer. The presented MoOx/SnOx interconnect allows for the ideal (loss-free) addition of the open circuit voltages of the two sub-cells.
AB - Multijunction solar cells are designed to improve the overlap with the solar spectrum and to minimize losses due to thermalization. Aside from the optimum choice of photoactive materials for the respective sub-cells, a proper interconnect is essential. This study demonstrates a novel all-oxide interconnect based on the interface of the high-work-function (WF) metal oxide MoOx and low-WF tin oxide (SnOx). In contrast to typical p-/n-type tunnel junctions, both the oxides are n-type semiconductors with a WF of 5.2 and 4.2 eV, respectively. It is demonstrated that the electronic line-up at the interface of MoOx and SnOx comprises a large intrinsic interface dipole (≈0.8 eV), which is key to afford ideal alignment of the conduction band of MoOx and SnOx, without the requirement of an additional metal or organic dipole layer. The presented MoOx/SnOx interconnect allows for the ideal (loss-free) addition of the open circuit voltages of the two sub-cells.
KW - atomic layer deposition
KW - charge recombination layers
KW - inverted organic solar cells
KW - organic tandem solar cells
KW - tin oxide
UR - http://www.scopus.com/inward/record.url?scp=85038836398&partnerID=8YFLogxK
U2 - 10.1002/aenm.201702533
DO - 10.1002/aenm.201702533
M3 - Article
AN - SCOPUS:85038836398
VL - 8
JO - Advanced Energy Materials
JF - Advanced Energy Materials
SN - 1614-6832
IS - 10
M1 - 1702533
ER -