All-optical switching in a quantum dot switch

R. Prasanth; J.E.M. Haverkort; A. Deepthy; E.W. Bogaart; J.J.G.M. Tol, van der; E.A. Patent; G. Zhao; Q. Gong; P.J. Veldhoven, van; R. Nötzel; J.H. Wolter

All-optical switching in a quantum dot switch

R. Prasanth, J.E.M. Haverkort, A. Deepthy, E.W. Bogaart, J.J.G.M. Tol, van der, E.A. Patent, G. Zhao, Q. Gong, P.J. Veldhoven, van, R. Nötzel, J.H. Wolter

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

Abstract

We report all-optical switching due to state-filling in quantum dots (QDs) within a Mach- Zehnder Interferometric (MZI) switch. The MZI was fabricated using InGaAsP/InP waveguides containing a single layer of InAs/InP QDs. A 1530- 1570 nm probe beam is switched by optical excitation of one MZI-arm. By exciting below the InGaAsP bandgap, we prove that the refractive index nonlinearity is entirely due to the QDs. The switching efficiency is 5 rad/(µW absorbed power). Probe wavelength insensitivity was obtained using a broad size distribution of QDs.

Original language	English
Title of host publication	proc. Semiconductor Advances for Future Electronics (SAFE) 03
Place of Publication	Veldhoven, The Netherlands
Publisher	STW Technology Foundation
Pages	635-638
ISBN (Print)	90-73461-39-1
Publication status	Published - 2003
Event	Semiconductor Advances for Future Electronics (SAFE) 03 - Veldhoven, Netherlands Duration: 25 Nov 2003 → 26 Nov 2003

Conference

Conference	Semiconductor Advances for Future Electronics (SAFE) 03
Country/Territory	Netherlands
City	Veldhoven
Period	25/11/03 → 26/11/03

Cite this

@inproceedings{0e601c9d9ff84928ad9126cee572a3e9,

title = "All-optical switching in a quantum dot switch",

abstract = "We report all-optical switching due to state-filling in quantum dots (QDs) within a Mach- Zehnder Interferometric (MZI) switch. The MZI was fabricated using InGaAsP/InP waveguides containing a single layer of InAs/InP QDs. A 1530- 1570 nm probe beam is switched by optical excitation of one MZI-arm. By exciting below the InGaAsP bandgap, we prove that the refractive index nonlinearity is entirely due to the QDs. The switching efficiency is 5 rad/(µW absorbed power). Probe wavelength insensitivity was obtained using a broad size distribution of QDs.",

author = "R. Prasanth and J.E.M. Haverkort and A. Deepthy and E.W. Bogaart and {Tol, van der}, J.J.G.M. and E.A. Patent and G. Zhao and Q. Gong and {Veldhoven, van}, P.J. and R. N{\"o}tzel and J.H. Wolter",

year = "2003",

language = "English",

isbn = "90-73461-39-1",

pages = "635--638",

booktitle = "proc. Semiconductor Advances for Future Electronics (SAFE) 03",

publisher = "STW Technology Foundation",

note = "Semiconductor Advances for Future Electronics (SAFE) 03 ; Conference date: 25-11-2003 Through 26-11-2003",

}

Prasanth, R, Haverkort, JEM, Deepthy, A, Bogaart, EW, Tol, van der, JJGM, Patent, EA, Zhao, G, Gong, Q, Veldhoven, van, PJ, Nötzel, R & Wolter, JH 2003, All-optical switching in a quantum dot switch. in proc. Semiconductor Advances for Future Electronics (SAFE) 03. STW Technology Foundation, Veldhoven, The Netherlands, pp. 635-638, Semiconductor Advances for Future Electronics (SAFE) 03, Veldhoven, Netherlands, 25/11/03.

TY - GEN

T1 - All-optical switching in a quantum dot switch

AU - Prasanth, R.

AU - Haverkort, J.E.M.

AU - Deepthy, A.

AU - Bogaart, E.W.

AU - Tol, van der, J.J.G.M.

AU - Patent, E.A.

AU - Zhao, G.

AU - Gong, Q.

AU - Veldhoven, van, P.J.

AU - Nötzel, R.

AU - Wolter, J.H.

PY - 2003

Y1 - 2003

N2 - We report all-optical switching due to state-filling in quantum dots (QDs) within a Mach- Zehnder Interferometric (MZI) switch. The MZI was fabricated using InGaAsP/InP waveguides containing a single layer of InAs/InP QDs. A 1530- 1570 nm probe beam is switched by optical excitation of one MZI-arm. By exciting below the InGaAsP bandgap, we prove that the refractive index nonlinearity is entirely due to the QDs. The switching efficiency is 5 rad/(µW absorbed power). Probe wavelength insensitivity was obtained using a broad size distribution of QDs.

AB - We report all-optical switching due to state-filling in quantum dots (QDs) within a Mach- Zehnder Interferometric (MZI) switch. The MZI was fabricated using InGaAsP/InP waveguides containing a single layer of InAs/InP QDs. A 1530- 1570 nm probe beam is switched by optical excitation of one MZI-arm. By exciting below the InGaAsP bandgap, we prove that the refractive index nonlinearity is entirely due to the QDs. The switching efficiency is 5 rad/(µW absorbed power). Probe wavelength insensitivity was obtained using a broad size distribution of QDs.

M3 - Conference contribution

SN - 90-73461-39-1

SP - 635

EP - 638

BT - proc. Semiconductor Advances for Future Electronics (SAFE) 03

PB - STW Technology Foundation

CY - Veldhoven, The Netherlands

T2 - Semiconductor Advances for Future Electronics (SAFE) 03

Y2 - 25 November 2003 through 26 November 2003

ER -

All-optical switching in a quantum dot switch

Abstract

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