All-optical switching in a quantum dot switch

R. Prasanth, J.E.M. Haverkort, A. Deepthy, E.W. Bogaart, J.J.G.M. Tol, van der, E.A. Patent, G. Zhao, Q. Gong, P.J. Veldhoven, van, R. Nötzel, J.H. Wolter

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

Abstract

We report all-optical switching due to state-filling in quantum dots (QDs) within a Mach- Zehnder Interferometric (MZI) switch. The MZI was fabricated using InGaAsP/InP waveguides containing a single layer of InAs/InP QDs. A 1530- 1570 nm probe beam is switched by optical excitation of one MZI-arm. By exciting below the InGaAsP bandgap, we prove that the refractive index nonlinearity is entirely due to the QDs. The switching efficiency is 5 rad/(µW absorbed power). Probe wavelength insensitivity was obtained using a broad size distribution of QDs.
Original languageEnglish
Title of host publicationproc. Semiconductor Advances for Future Electronics (SAFE) 03
Place of PublicationVeldhoven, The Netherlands
PublisherSTW Technology Foundation
Pages635-638
ISBN (Print)90-73461-39-1
Publication statusPublished - 2003
EventSemiconductor Advances for Future Electronics (SAFE) 03 - Veldhoven, Netherlands
Duration: 25 Nov 200326 Nov 2003

Conference

ConferenceSemiconductor Advances for Future Electronics (SAFE) 03
CountryNetherlands
CityVeldhoven
Period25/11/0326/11/03

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  • Cite this

    Prasanth, R., Haverkort, J. E. M., Deepthy, A., Bogaart, E. W., Tol, van der, J. J. G. M., Patent, E. A., Zhao, G., Gong, Q., Veldhoven, van, P. J., Nötzel, R., & Wolter, J. H. (2003). All-optical switching in a quantum dot switch. In proc. Semiconductor Advances for Future Electronics (SAFE) 03 (pp. 635-638). STW Technology Foundation.