All-optical AND gate based on ultrafast carrier dynamics in multi-quantum-well semiconductor optical amplifier

X. Yang; A.K. Mishra; D. Lenstra; Frans Huijskens; H. Waardt, de; G.D. Khoe; H.J.S. Dorren

All-optical AND gate based on ultrafast carrier dynamics in multi-quantum-well semiconductor optical amplifier

X. Yang
, A.K. Mishra
, D. Lenstra
, Frans Huijskens
, H. Waardt, de
, G.D. Khoe
, H.J.S. Dorren

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

Abstract

We demonstrate an all-optical AND gate that is operated by the nonlinear phase shift in a semiconductor optical amplifier (SOA). The gate is made out of a commercially available InGaAsP-InGaAs multi-quantum-well (MQW) SOA placed in a Mach-Zehnder interferometer. All-optical AND gate operation is demonstrated for 200 fs optical pulses. We show that the gate has a contrast ratio better than 11 dB and that the switching time is less than 1 picosecond. The gate is operated with pulse energies of 800 femtojoule.

Original language	English
Title of host publication	proc. IEEE/LEOS Benelux Annual Symposium 2003, Enschede, The Netherlands
Place of Publication	Enschede, The Netherlands
Publisher	Institute of Electrical and Electronics Engineers
Pages	209-212
ISBN (Print)	90-365-1990-X
Publication status	Published - 2003
Event	8th Annual Symposium of the IEEE/LEOS Benelux Chapter, November 20-21, 2003, Enschede, Netherlands - Enschede, Netherlands Duration: 20 Nov 2003 → 21 Nov 2003

Conference

Conference	8th Annual Symposium of the IEEE/LEOS Benelux Chapter, November 20-21, 2003, Enschede, Netherlands
Country/Territory	Netherlands
City	Enschede
Period	20/11/03 → 21/11/03

Cite this

@inproceedings{a2a1b65c49e744aa9366cde52bc9a4f1,

title = "All-optical AND gate based on ultrafast carrier dynamics in multi-quantum-well semiconductor optical amplifier",

abstract = "We demonstrate an all-optical AND gate that is operated by the nonlinear phase shift in a semiconductor optical amplifier (SOA). The gate is made out of a commercially available InGaAsP-InGaAs multi-quantum-well (MQW) SOA placed in a Mach-Zehnder interferometer. All-optical AND gate operation is demonstrated for 200 fs optical pulses. We show that the gate has a contrast ratio better than 11 dB and that the switching time is less than 1 picosecond. The gate is operated with pulse energies of 800 femtojoule.",

author = "X. Yang and A.K. Mishra and D. Lenstra and Frans Huijskens and \{Waardt, de\}, H. and G.D. Khoe and H.J.S. Dorren",

year = "2003",

language = "English",

isbn = "90-365-1990-X",

pages = "209--212",

booktitle = "proc. IEEE/LEOS Benelux Annual Symposium 2003, Enschede, The Netherlands",

publisher = "Institute of Electrical and Electronics Engineers",

address = "United States",

note = "8th Annual Symposium of the IEEE/LEOS Benelux Chapter, November 20-21, 2003, Enschede, Netherlands ; Conference date: 20-11-2003 Through 21-11-2003",

}

Yang, X, Mishra, AK, Lenstra, D, Huijskens, F, Waardt, de, H , Khoe, GD & Dorren, HJS 2003, All-optical AND gate based on ultrafast carrier dynamics in multi-quantum-well semiconductor optical amplifier. in proc. IEEE/LEOS Benelux Annual Symposium 2003, Enschede, The Netherlands. Institute of Electrical and Electronics Engineers, Enschede, The Netherlands, pp. 209-212, 8th Annual Symposium of the IEEE/LEOS Benelux Chapter, November 20-21, 2003, Enschede, Netherlands, Enschede, Netherlands, 20/11/03.

All-optical AND gate based on ultrafast carrier dynamics in multi-quantum-well semiconductor optical amplifier. / Yang, X.; Mishra, A.K.; Lenstra, D. et al.
proc. IEEE/LEOS Benelux Annual Symposium 2003, Enschede, The Netherlands. Enschede, The Netherlands: Institute of Electrical and Electronics Engineers, 2003. p. 209-212.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - All-optical AND gate based on ultrafast carrier dynamics in multi-quantum-well semiconductor optical amplifier

AU - Yang, X.

AU - Mishra, A.K.

AU - Lenstra, D.

AU - Huijskens, Frans

AU - Waardt, de, H.

AU - Khoe, G.D.

AU - Dorren, H.J.S.

PY - 2003

Y1 - 2003

N2 - We demonstrate an all-optical AND gate that is operated by the nonlinear phase shift in a semiconductor optical amplifier (SOA). The gate is made out of a commercially available InGaAsP-InGaAs multi-quantum-well (MQW) SOA placed in a Mach-Zehnder interferometer. All-optical AND gate operation is demonstrated for 200 fs optical pulses. We show that the gate has a contrast ratio better than 11 dB and that the switching time is less than 1 picosecond. The gate is operated with pulse energies of 800 femtojoule.

AB - We demonstrate an all-optical AND gate that is operated by the nonlinear phase shift in a semiconductor optical amplifier (SOA). The gate is made out of a commercially available InGaAsP-InGaAs multi-quantum-well (MQW) SOA placed in a Mach-Zehnder interferometer. All-optical AND gate operation is demonstrated for 200 fs optical pulses. We show that the gate has a contrast ratio better than 11 dB and that the switching time is less than 1 picosecond. The gate is operated with pulse energies of 800 femtojoule.

M3 - Conference contribution

SN - 90-365-1990-X

SP - 209

EP - 212

BT - proc. IEEE/LEOS Benelux Annual Symposium 2003, Enschede, The Netherlands

PB - Institute of Electrical and Electronics Engineers

CY - Enschede, The Netherlands

T2 - 8th Annual Symposium of the IEEE/LEOS Benelux Chapter, November 20-21, 2003, Enschede, Netherlands

Y2 - 20 November 2003 through 21 November 2003

ER -

All-optical AND gate based on ultrafast carrier dynamics in multi-quantum-well semiconductor optical amplifier

Abstract

Conference

Fingerprint

Cite this