Alignment of linear polymeric grains for highly stable N-type thin-film transistors

Yingying Jiang; Lu Ning; Chuan Liu; Yunlong Sun; Junyu Li; Zitong Liu; Yuanping Yi; Dong Qiu; Chunyong He; Yunlong Guo; Wenping Hu; Yunqi Liu

doi:10.1016/j.chempr.2021.01.016

Alignment of linear polymeric grains for highly stable N-type thin-film transistors

Yingying Jiang
, Lu Ning
, Chuan Liu
, Yunlong Sun
, Junyu Li
, Zitong Liu
, Yuanping Yi
, Dong Qiu
, Chunyong He
, Yunlong Guo (Corresponding author)
, Wenping Hu (Corresponding author)
, Yunqi Liu (Corresponding author)

Molecular Materials and Nanosystems

Research output: Contribution to journal › Article › Academic › peer-review

40 Citations (Scopus)

Abstract

Temperature-insensitive properties are attractive for most electronics, including polymeric semiconducting devices. Especially, polymeric field-effect transistors (FETs) with high mobility have been important research targets due to their broad applications. However, polymeric FETs with stable charge transport operating at extremely cold or hot zones are faced with enormous challenges. In this study, the polyacrylonitrile was found to significantly tune the sizes of pre-aggregates of polymers in solutions and the crystallinity of the polymeric films. The orientation of 5–25 μm linear grains in the films were prepared through the bar-coating process with polyacrylonitrile as an additive, which stabilized the electron mobility over a wide range of temperatures. The linear-grain morphology of the film contributed to reducing the holes and grain boundaries in the transport paths of carriers. Typically, the top-gate FETs based on P(NDI2OD-T2) displayed a stable electron transporting behavior from 200 to 460 K, with mobility greater than 3.5 cm²V⁻¹s⁻¹.

Original language	English
Pages (from-to)	1258-1270
Number of pages	13
Journal	Chem
Volume	7
Issue number	5
DOIs	https://doi.org/10.1016/j.chempr.2021.01.016
Publication status	Published - 13 May 2021

Funding

The authors acknowledge the financial support from the National Key R&D Program of “Key Scientific Issues of Transformative Technology” (grant no. 2018YFA0703200 ), the National Natural Science Foundation of China (nos. 61890940 , 21922511 , 51873216 , and 91833306 ), the Strategic Priority Research Program of the Chinese Academy of Sciences ( XDB30000000 ), and the CAS Key Research Program of Frontier Sciences (grant no. QYZDYSSW-SLH029 ). 2D-GIWAXS results were obtained by the Advanced Photon Source (APS) at Argonne National Laboratory , which was supported by the U.S. Department of Energy , Office of Science , Office of Basic Energy Sciences , under contract no. DE-AC02-06CH11357. The authors would like to thank MJ Editor ( www.mjeditor.com ) for his/her linguistic assistance during the revision of this manuscript.

Funders	Funder number
U.S. Department of Energy
Argonne National Laboratory
National Natural Science Foundation of China	51873216, 21922511, 91833306, 61890940
Chinese Academy of Sciences, Beijing	XDB30000000

Keywords

electron transporting
linear polymeric grains
SDG12: Responsible consumption and production
stable
thin-film transistors

Access to Document

10.1016/j.chempr.2021.01.016

Cite this

@article{ce54c879dfa94449ba6e8dbd9792d6a4,

title = "Alignment of linear polymeric grains for highly stable N-type thin-film transistors",

abstract = "Temperature-insensitive properties are attractive for most electronics, including polymeric semiconducting devices. Especially, polymeric field-effect transistors (FETs) with high mobility have been important research targets due to their broad applications. However, polymeric FETs with stable charge transport operating at extremely cold or hot zones are faced with enormous challenges. In this study, the polyacrylonitrile was found to significantly tune the sizes of pre-aggregates of polymers in solutions and the crystallinity of the polymeric films. The orientation of 5–25 μm linear grains in the films were prepared through the bar-coating process with polyacrylonitrile as an additive, which stabilized the electron mobility over a wide range of temperatures. The linear-grain morphology of the film contributed to reducing the holes and grain boundaries in the transport paths of carriers. Typically, the top-gate FETs based on P(NDI2OD-T2) displayed a stable electron transporting behavior from 200 to 460 K, with mobility greater than 3.5 cm2V−1s−1.",

keywords = "electron transporting, linear polymeric grains, SDG12: Responsible consumption and production, stable, thin-film transistors",

author = "Yingying Jiang and Lu Ning and Chuan Liu and Yunlong Sun and Junyu Li and Zitong Liu and Yuanping Yi and Dong Qiu and Chunyong He and Yunlong Guo and Wenping Hu and Yunqi Liu",

note = "Publisher Copyright: {\textcopyright} 2021 Elsevier Inc.",

year = "2021",

month = may,

day = "13",

doi = "10.1016/j.chempr.2021.01.016",

language = "English",

volume = "7",

pages = "1258--1270",

journal = "Chem",

issn = "2451-9308",

publisher = "Elsevier",

number = "5",

}

TY - JOUR

T1 - Alignment of linear polymeric grains for highly stable N-type thin-film transistors

AU - Jiang, Yingying

AU - Ning, Lu

AU - Liu, Chuan

AU - Sun, Yunlong

AU - Li, Junyu

AU - Liu, Zitong

AU - Yi, Yuanping

AU - Qiu, Dong

AU - He, Chunyong

AU - Guo, Yunlong

AU - Hu, Wenping

AU - Liu, Yunqi

PY - 2021/5/13

Y1 - 2021/5/13

N2 - Temperature-insensitive properties are attractive for most electronics, including polymeric semiconducting devices. Especially, polymeric field-effect transistors (FETs) with high mobility have been important research targets due to their broad applications. However, polymeric FETs with stable charge transport operating at extremely cold or hot zones are faced with enormous challenges. In this study, the polyacrylonitrile was found to significantly tune the sizes of pre-aggregates of polymers in solutions and the crystallinity of the polymeric films. The orientation of 5–25 μm linear grains in the films were prepared through the bar-coating process with polyacrylonitrile as an additive, which stabilized the electron mobility over a wide range of temperatures. The linear-grain morphology of the film contributed to reducing the holes and grain boundaries in the transport paths of carriers. Typically, the top-gate FETs based on P(NDI2OD-T2) displayed a stable electron transporting behavior from 200 to 460 K, with mobility greater than 3.5 cm2V−1s−1.

AB - Temperature-insensitive properties are attractive for most electronics, including polymeric semiconducting devices. Especially, polymeric field-effect transistors (FETs) with high mobility have been important research targets due to their broad applications. However, polymeric FETs with stable charge transport operating at extremely cold or hot zones are faced with enormous challenges. In this study, the polyacrylonitrile was found to significantly tune the sizes of pre-aggregates of polymers in solutions and the crystallinity of the polymeric films. The orientation of 5–25 μm linear grains in the films were prepared through the bar-coating process with polyacrylonitrile as an additive, which stabilized the electron mobility over a wide range of temperatures. The linear-grain morphology of the film contributed to reducing the holes and grain boundaries in the transport paths of carriers. Typically, the top-gate FETs based on P(NDI2OD-T2) displayed a stable electron transporting behavior from 200 to 460 K, with mobility greater than 3.5 cm2V−1s−1.

KW - electron transporting

KW - linear polymeric grains

KW - SDG12: Responsible consumption and production

KW - stable

KW - thin-film transistors

UR - https://www.scopus.com/pages/publications/85101687755

U2 - 10.1016/j.chempr.2021.01.016

DO - 10.1016/j.chempr.2021.01.016

M3 - Article

AN - SCOPUS:85101687755

SN - 2451-9308

VL - 7

SP - 1258

EP - 1270

JO - Chem

JF - Chem

IS - 5

ER -

Alignment of linear polymeric grains for highly stable N-type thin-film transistors

Abstract

Funding

Keywords

Access to Document

Other files and links

Fingerprint

Cite this