Advanced PMOS device architecture for highly-doped ultra-shallow junctions

Radu Surdeanu, Bartlomiej J. Pawlak, Richard Lindsay, Mark van Dal, Gerben Doornbos, Charles J.J. Dachs, Youri V. Ponomarev, Josine J.P. Loo, Florence N. Cubaynes, Kirklen Henson, Marcel A. Verheijen, Monja Kaiser, Xavier Pages, Peter A. Stolk, Bill Taylor, Malgorzata Jurczak

Research output: Contribution to journalArticleAcademicpeer-review

4 Citations (Scopus)


In this paper we study the integration of Boron ultra-shallow junctions (USJ) obtained by Germanium pre-amorphization, Fluorine co-implantation and fast ramp-up and ramp-down anneals into advanced p-channel metal-oxide-semiconductor (PMOS) devices. Several integration issues associated to these USJ are investigated: short-channel effects control, implantation tilt angle influence, junction de-activation, thermal budget, silicide process. We show that remarkable PMOS device performance enhancement (Ion = 450 μA/μm at Ioff = 250 nA/μm for devices with Lg ≃ 50 nm) can be achieved when full potential of highly-active and abrupt USJ is exploited by combining it with a low thermal budget integration scheme and a low contact resistance NiSi.

Original languageEnglish
Pages (from-to)1778-1783
Number of pages6
JournalJapanese Journal of Applied Physics, Part 1 : Regular Papers and Short Notes & Review Papers
Issue number4 B
Publication statusPublished - 1 Jan 2004


  • CMOS device integration
  • Co-implantation
  • NiSi
  • Pre-amorphization
  • Ultra-shallow junctions (USJ)


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