Advanced PMOS device architecture for highly-doped ultra-shallow junctions

Radu Surdeanu; Bartlomiej J. Pawlak; Richard Lindsay; Mark van Dal; Gerben Doornbos; Charles J.J. Dachs; Youri V. Ponomarev; Josine J.P. Loo; Florence N. Cubaynes; Kirklen Henson; Marcel A. Verheijen; Monja Kaiser; Xavier Pages; Peter A. Stolk; Bill Taylor; Malgorzata Jurczak

doi:10.1143/JJAP.43.1778

Advanced PMOS device architecture for highly-doped ultra-shallow junctions

Radu Surdeanu, Bartlomiej J. Pawlak, Richard Lindsay, Mark van Dal, Gerben Doornbos, Charles J.J. Dachs, Youri V. Ponomarev, Josine J.P. Loo, Florence N. Cubaynes, Kirklen Henson, Marcel A. Verheijen, Monja Kaiser, Xavier Pages, Peter A. Stolk, Bill Taylor, Malgorzata Jurczak

Research output: Contribution to journal › Article › Academic › peer-review

4 Citations (Scopus)

Abstract

In this paper we study the integration of Boron ultra-shallow junctions (USJ) obtained by Germanium pre-amorphization, Fluorine co-implantation and fast ramp-up and ramp-down anneals into advanced p-channel metal-oxide-semiconductor (PMOS) devices. Several integration issues associated to these USJ are investigated: short-channel effects control, implantation tilt angle influence, junction de-activation, thermal budget, silicide process. We show that remarkable PMOS device performance enhancement (I_on = 450 μA/μm at I_off = 250 nA/μm for devices with L_g ≃ 50 nm) can be achieved when full potential of highly-active and abrupt USJ is exploited by combining it with a low thermal budget integration scheme and a low contact resistance NiSi.

Original language	English
Pages (from-to)	1778-1783
Number of pages	6
Journal	Japanese Journal of Applied Physics, Part 1 : Regular Papers and Short Notes & Review Papers
Volume	43
Issue number	4 B
DOIs	https://doi.org/10.1143/JJAP.43.1778
Publication status	Published - 1 Jan 2004

Keywords

CMOS device integration
Co-implantation
NiSi
Pre-amorphization
Ultra-shallow junctions (USJ)

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10.1143/JJAP.43.1778

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Surdeanu, R., Pawlak, B. J., Lindsay, R., van Dal, M., Doornbos, G., Dachs, C. J. J., Ponomarev, Y. V., Loo, J. J. P., Cubaynes, F. N., Henson, K., Verheijen, M. A., Kaiser, M., Pages, X., Stolk, P. A., Taylor, B., & Jurczak, M. (2004). Advanced PMOS device architecture for highly-doped ultra-shallow junctions. Japanese Journal of Applied Physics, Part 1 : Regular Papers and Short Notes & Review Papers, 43(4 B), 1778-1783. https://doi.org/10.1143/JJAP.43.1778

@article{5e74cf74ee264e71b71723df44de070f,

title = "Advanced PMOS device architecture for highly-doped ultra-shallow junctions",

abstract = "In this paper we study the integration of Boron ultra-shallow junctions (USJ) obtained by Germanium pre-amorphization, Fluorine co-implantation and fast ramp-up and ramp-down anneals into advanced p-channel metal-oxide-semiconductor (PMOS) devices. Several integration issues associated to these USJ are investigated: short-channel effects control, implantation tilt angle influence, junction de-activation, thermal budget, silicide process. We show that remarkable PMOS device performance enhancement (Ion = 450 μA/μm at Ioff = 250 nA/μm for devices with Lg ≃ 50 nm) can be achieved when full potential of highly-active and abrupt USJ is exploited by combining it with a low thermal budget integration scheme and a low contact resistance NiSi.",

keywords = "CMOS device integration, Co-implantation, NiSi, Pre-amorphization, Ultra-shallow junctions (USJ)",

author = "Radu Surdeanu and Pawlak, {Bartlomiej J.} and Richard Lindsay and {van Dal}, Mark and Gerben Doornbos and Dachs, {Charles J.J.} and Ponomarev, {Youri V.} and Loo, {Josine J.P.} and Cubaynes, {Florence N.} and Kirklen Henson and Verheijen, {Marcel A.} and Monja Kaiser and Xavier Pages and Stolk, {Peter A.} and Bill Taylor and Malgorzata Jurczak",

year = "2004",

month = jan,

day = "1",

doi = "10.1143/JJAP.43.1778",

language = "English",

volume = "43",

pages = "1778--1783",

journal = "Japanese Journal of Applied Physics, Part 1 : Regular Papers and Short Notes & Review Papers",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

number = "4 B",

}

Surdeanu, R, Pawlak, BJ, Lindsay, R, van Dal, M, Doornbos, G, Dachs, CJJ, Ponomarev, YV, Loo, JJP, Cubaynes, FN, Henson, K, Verheijen, MA, Kaiser, M, Pages, X, Stolk, PA, Taylor, B & Jurczak, M 2004, 'Advanced PMOS device architecture for highly-doped ultra-shallow junctions', Japanese Journal of Applied Physics, Part 1 : Regular Papers and Short Notes & Review Papers, vol. 43, no. 4 B, pp. 1778-1783. https://doi.org/10.1143/JJAP.43.1778

TY - JOUR

T1 - Advanced PMOS device architecture for highly-doped ultra-shallow junctions

AU - Surdeanu, Radu

AU - Pawlak, Bartlomiej J.

AU - Lindsay, Richard

AU - van Dal, Mark

AU - Doornbos, Gerben

AU - Dachs, Charles J.J.

AU - Ponomarev, Youri V.

AU - Loo, Josine J.P.

AU - Cubaynes, Florence N.

AU - Henson, Kirklen

AU - Verheijen, Marcel A.

AU - Kaiser, Monja

AU - Pages, Xavier

AU - Stolk, Peter A.

AU - Taylor, Bill

AU - Jurczak, Malgorzata

PY - 2004/1/1

Y1 - 2004/1/1

N2 - In this paper we study the integration of Boron ultra-shallow junctions (USJ) obtained by Germanium pre-amorphization, Fluorine co-implantation and fast ramp-up and ramp-down anneals into advanced p-channel metal-oxide-semiconductor (PMOS) devices. Several integration issues associated to these USJ are investigated: short-channel effects control, implantation tilt angle influence, junction de-activation, thermal budget, silicide process. We show that remarkable PMOS device performance enhancement (Ion = 450 μA/μm at Ioff = 250 nA/μm for devices with Lg ≃ 50 nm) can be achieved when full potential of highly-active and abrupt USJ is exploited by combining it with a low thermal budget integration scheme and a low contact resistance NiSi.

AB - In this paper we study the integration of Boron ultra-shallow junctions (USJ) obtained by Germanium pre-amorphization, Fluorine co-implantation and fast ramp-up and ramp-down anneals into advanced p-channel metal-oxide-semiconductor (PMOS) devices. Several integration issues associated to these USJ are investigated: short-channel effects control, implantation tilt angle influence, junction de-activation, thermal budget, silicide process. We show that remarkable PMOS device performance enhancement (Ion = 450 μA/μm at Ioff = 250 nA/μm for devices with Lg ≃ 50 nm) can be achieved when full potential of highly-active and abrupt USJ is exploited by combining it with a low thermal budget integration scheme and a low contact resistance NiSi.

KW - CMOS device integration

KW - Co-implantation

KW - NiSi

KW - Pre-amorphization

KW - Ultra-shallow junctions (USJ)

UR - http://www.scopus.com/inward/record.url?scp=17144448985&partnerID=8YFLogxK

U2 - 10.1143/JJAP.43.1778

DO - 10.1143/JJAP.43.1778

M3 - Article

AN - SCOPUS:17144448985

SN - 0021-4922

VL - 43

SP - 1778

EP - 1783

JO - Japanese Journal of Applied Physics, Part 1 : Regular Papers and Short Notes & Review Papers

JF - Japanese Journal of Applied Physics, Part 1 : Regular Papers and Short Notes & Review Papers

IS - 4 B

ER -

Advanced PMOS device architecture for highly-doped ultra-shallow junctions

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Keywords

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