@book{6dddd2a7f41f4831850aad70052c7b6c,
title = "Advanced gate stack, source/drain and channel engineering for Si-based CMOS 6 : new materials, processes and equipment",
abstract = "These proceedings describe processing, materials and equipment for CMOS front-end integration including gate stack, source/drain and channel engineering. Topics: strained Si/SiGe and Si/SiGe on insulator; high-mobility channels including III-Vzs, etc.; nanowires and carbon nanotubes; high-k dielectrics, metal and FUSI gate electrodes; doping/annealing for ultra-shallow junctions; low-resistivity contacts; advanced deposition (e.g. ALD, CVD, MBE), RTP, UV, plasma and laser-assisted processes.",
editor = "E.P. Gusev and H. Iwai and D.-L. Kwong and M. {\"O}zt{\"u}rk and F. Roozeboom and P.J. Timans and V. Narayanan",
note = "Vancouver, Canada, April 26-27, 2010, held as a part of the 217th meeting of the Electrochemical Society (ECS)",
year = "2010",
language = "English",
isbn = "978-1-56677-791-9",
series = "ECS transactions",
publisher = "Electrochemical Society, Inc.",
number = "1",
address = "United States",
}