Adhesive bonding of InP/InGaAsP dies to processed silicon-on-insulator wafers using DVS-bis-benzocyclobutene

G. Roelkens; J. Brouckaert; D. Thourhout, Van; R.G.F. Baets; R. Nötzel; M.K. Smit

doi:10.1149/1.2352045

Adhesive bonding of InP/InGaAsP dies to processed silicon-on-insulator wafers using DVS-bis-benzocyclobutene

G. Roelkens
, J. Brouckaert
, D. Thourhout, Van
, R.G.F. Baets
, R. Nötzel
, M.K. Smit

Research output: Contribution to journal › Article › Academic › peer-review

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Abstract

The process of bonding InP/InGaAsP dies to a processed silicon-on-insulator wafer using sub-300 nm layers of DVS-bis-benzocyclobutene (BCB) was developed. The planarization properties of these DVS-bis-BCB layers were measured and an optimal prebonding die preparation and polymer precure are presented. Bonding quality and bonding strength are assessed, showing high-quality bonding with sufficient bonding strength to survive postbonding processing.

Original language	English
Pages (from-to)	G1015-G1019
Number of pages	5
Journal	Journal of the Electrochemical Society
Volume	153
Issue number	12
DOIs	https://doi.org/10.1149/1.2352045
Publication status	Published - 2006

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title = "Adhesive bonding of InP/InGaAsP dies to processed silicon-on-insulator wafers using DVS-bis-benzocyclobutene",

abstract = "The process of bonding InP/InGaAsP dies to a processed silicon-on-insulator wafer using sub-300 nm layers of DVS-bis-benzocyclobutene (BCB) was developed. The planarization properties of these DVS-bis-BCB layers were measured and an optimal prebonding die preparation and polymer precure are presented. Bonding quality and bonding strength are assessed, showing high-quality bonding with sufficient bonding strength to survive postbonding processing.",

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T1 - Adhesive bonding of InP/InGaAsP dies to processed silicon-on-insulator wafers using DVS-bis-benzocyclobutene

AU - Roelkens, G.

AU - Brouckaert, J.

AU - Thourhout, Van, D.

AU - Baets, R.G.F.

AU - Nötzel, R.

AU - Smit, M.K.

PY - 2006

Y1 - 2006

N2 - The process of bonding InP/InGaAsP dies to a processed silicon-on-insulator wafer using sub-300 nm layers of DVS-bis-benzocyclobutene (BCB) was developed. The planarization properties of these DVS-bis-BCB layers were measured and an optimal prebonding die preparation and polymer precure are presented. Bonding quality and bonding strength are assessed, showing high-quality bonding with sufficient bonding strength to survive postbonding processing.

AB - The process of bonding InP/InGaAsP dies to a processed silicon-on-insulator wafer using sub-300 nm layers of DVS-bis-benzocyclobutene (BCB) was developed. The planarization properties of these DVS-bis-BCB layers were measured and an optimal prebonding die preparation and polymer precure are presented. Bonding quality and bonding strength are assessed, showing high-quality bonding with sufficient bonding strength to survive postbonding processing.

U2 - 10.1149/1.2352045

DO - 10.1149/1.2352045

M3 - Article

SN - 0013-4651

VL - 153

SP - G1015-G1019

JO - Journal of the Electrochemical Society

JF - Journal of the Electrochemical Society

IS - 12

ER -

Adhesive bonding of InP/InGaAsP dies to processed silicon-on-insulator wafers using DVS-bis-benzocyclobutene

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