Adhesive bonding of InP/InGaAsP dies to processed silicon-on-insulator wafers using DVS-bis-benzocyclobutene

G. Roelkens, J. Brouckaert, D. Thourhout, Van, R.G.F. Baets, R. Nötzel, M.K. Smit

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Abstract

The process of bonding InP/InGaAsP dies to a processed silicon-on-insulator wafer using sub-300 nm layers of DVS-bis-benzocyclobutene (BCB) was developed. The planarization properties of these DVS-bis-BCB layers were measured and an optimal prebonding die preparation and polymer precure are presented. Bonding quality and bonding strength are assessed, showing high-quality bonding with sufficient bonding strength to survive postbonding processing.
Original languageEnglish
Pages (from-to)G1015-G1019
Number of pages5
JournalJournal of the Electrochemical Society
Volume153
Issue number12
DOIs
Publication statusPublished - 2006

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