Active tuning of the g -tensor in InGaAs/GaAs quantum dots via strain

H.M.G.A. Tholen (Corresponding author), J.S. Wildmann, A. Rastelli, R. Trotta, C.E. Pryor, E. Zallo, O.G. Schmidt, P.M. Koenraad, A. Yu Silov

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Abstract

Dynamic control over the full g-tensor in individual InGaAs/GaAs self-assembled quantum dots is achieved by inducing external strain via a piezoelectric actuator. The full g-tensor is obtained by measuring in different geometries with different angles between an externally applied magnetic field and the quantum dot growth axes. A large decrease in the out-of-plane hole g-factor with strain is observed, whereas the other components are found to be less sensitive. To further investigate this, a numerical model based on eight-band k.p-theory is used and an excellent agreement with the experimental results is established, both qualitatively and quantitatively. Furthermore, the calculations reveal the origin of the observed large change in the out-of-plane hole g-factor to be the increase in heavy-hole light-hole splitting under compressive stress.

Original languageEnglish
Article number195305
Number of pages8
JournalPhysical Review B
Volume99
Issue number19
DOIs
Publication statusPublished - 16 May 2019

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Semiconductor quantum dots
Tensors
Tuning
tuning
quantum dots
tensors
Piezoelectric actuators
Compressive stress
Numerical models
Magnetic fields
dynamic control
Geometry
piezoelectric actuators
gallium arsenide
geometry
magnetic fields

Cite this

Tholen, H.M.G.A. ; Wildmann, J.S. ; Rastelli, A. ; Trotta, R. ; Pryor, C.E. ; Zallo, E. ; Schmidt, O.G. ; Koenraad, P.M. ; Silov, A. Yu. / Active tuning of the g -tensor in InGaAs/GaAs quantum dots via strain. In: Physical Review B. 2019 ; Vol. 99, No. 19.
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abstract = "Dynamic control over the full g-tensor in individual InGaAs/GaAs self-assembled quantum dots is achieved by inducing external strain via a piezoelectric actuator. The full g-tensor is obtained by measuring in different geometries with different angles between an externally applied magnetic field and the quantum dot growth axes. A large decrease in the out-of-plane hole g-factor with strain is observed, whereas the other components are found to be less sensitive. To further investigate this, a numerical model based on eight-band k.p-theory is used and an excellent agreement with the experimental results is established, both qualitatively and quantitatively. Furthermore, the calculations reveal the origin of the observed large change in the out-of-plane hole g-factor to be the increase in heavy-hole light-hole splitting under compressive stress.",
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Active tuning of the g -tensor in InGaAs/GaAs quantum dots via strain. / Tholen, H.M.G.A. (Corresponding author); Wildmann, J.S.; Rastelli, A.; Trotta, R.; Pryor, C.E.; Zallo, E.; Schmidt, O.G.; Koenraad, P.M.; Silov, A. Yu.

In: Physical Review B, Vol. 99, No. 19, 195305, 16.05.2019.

Research output: Contribution to journalArticleAcademicpeer-review

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AU - Tholen, H.M.G.A.

AU - Wildmann, J.S.

AU - Rastelli, A.

AU - Trotta, R.

AU - Pryor, C.E.

AU - Zallo, E.

AU - Schmidt, O.G.

AU - Koenraad, P.M.

AU - Silov, A. Yu

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AB - Dynamic control over the full g-tensor in individual InGaAs/GaAs self-assembled quantum dots is achieved by inducing external strain via a piezoelectric actuator. The full g-tensor is obtained by measuring in different geometries with different angles between an externally applied magnetic field and the quantum dot growth axes. A large decrease in the out-of-plane hole g-factor with strain is observed, whereas the other components are found to be less sensitive. To further investigate this, a numerical model based on eight-band k.p-theory is used and an excellent agreement with the experimental results is established, both qualitatively and quantitatively. Furthermore, the calculations reveal the origin of the observed large change in the out-of-plane hole g-factor to be the increase in heavy-hole light-hole splitting under compressive stress.

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Tholen HMGA, Wildmann JS, Rastelli A, Trotta R, Pryor CE, Zallo E et al. Active tuning of the g -tensor in InGaAs/GaAs quantum dots via strain. Physical Review B. 2019 May 16;99(19). 195305. https://doi.org/10.1103/PhysRevB.99.195305