Achievement of InSb quantum dots on InP(100) substrates

W. Lu, T. Rohel, N. Bertru, H. Folliot, C. Paranthoën, J.M. Jancu, A. Létoublon, A. Le Corre, C. Gatel, A. Ponchet, N. Combe, J.M. Ulloa, P.M. Koenraad

Research output: Contribution to journalArticleAcademicpeer-review

1 Downloads (Pure)


The formation of InSb quantum dots within a GaAs0.51Sb0.49 matrix lattice matched to InP is investigated. We show that the deposit of InSb on GaAs0.51Sb0.49 alloy surface, allows the achievement of a high density of InSb islands without dislocations. A strong dissolution of InSb quantum dots occurs during the capping with a GaAsSb layer. Reflection high energy electron diffraction analysis shows that InSb island dissolution occurs during the growth interruption under As and Sb. We propose a procedure based on the deposit of a thin GaSb capping layer on top of InSb islands to prevent the As/Sb exchange. Optical properties are investigated using photoluminescence. Electronic properties are discussed within an improved tight-binding model.
Original languageEnglish
Article number060210
Pages (from-to)060210-1/3
Number of pages3
JournalJournal of Applied Physics
Issue number6
Publication statusPublished - 2010


Dive into the research topics of 'Achievement of InSb quantum dots on InP(100) substrates'. Together they form a unique fingerprint.

Cite this