Accurate equivalent-network modelling of GaAs/AlAs based resonant tunneling diodes with thin barrier layers

J.J.M. Kwaspen; M.I. Lepsa; T.G. Roer, van de; W.C. Vleuten, van der

doi:10.1049/el:19971107

Accurate equivalent-network modelling of GaAs/AlAs based resonant tunneling diodes with thin barrier layers

J.J.M. Kwaspen, M.I. Lepsa, T.G. Roer, van de, W.C. Vleuten, van der

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Abstract

The small-signal intrinsic impedance of GaAs/AlAs based resonant tunnelling diodes with thin barriers has been measured at room temperature over the full 0-2 V bias-voltage and 0.05-40.05 GHz frequency ranges, on stable, non-oscillating devices. The classical Esaki and the quantum-inductance equivalent circuits were used to model the impedance for CAD purposes. Information about the quasibound-state lifetime against bias-voltage was extracted

Original language	English
Pages (from-to)	1657-1658
Journal	Electronics Letters
Volume	33
Issue number	19
DOIs	https://doi.org/10.1049/el:19971107
Publication status	Published - 1997

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title = "Accurate equivalent-network modelling of GaAs/AlAs based resonant tunneling diodes with thin barrier layers",

abstract = "The small-signal intrinsic impedance of GaAs/AlAs based resonant tunnelling diodes with thin barriers has been measured at room temperature over the full 0-2 V bias-voltage and 0.05-40.05 GHz frequency ranges, on stable, non-oscillating devices. The classical Esaki and the quantum-inductance equivalent circuits were used to model the impedance for CAD purposes. Information about the quasibound-state lifetime against bias-voltage was extracted",

author = "J.J.M. Kwaspen and M.I. Lepsa and {Roer, van de}, T.G. and {Vleuten, van der}, W.C.",

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AU - Kwaspen, J.J.M.

AU - Lepsa, M.I.

AU - Roer, van de, T.G.

AU - Vleuten, van der, W.C.

PY - 1997

Y1 - 1997

N2 - The small-signal intrinsic impedance of GaAs/AlAs based resonant tunnelling diodes with thin barriers has been measured at room temperature over the full 0-2 V bias-voltage and 0.05-40.05 GHz frequency ranges, on stable, non-oscillating devices. The classical Esaki and the quantum-inductance equivalent circuits were used to model the impedance for CAD purposes. Information about the quasibound-state lifetime against bias-voltage was extracted

AB - The small-signal intrinsic impedance of GaAs/AlAs based resonant tunnelling diodes with thin barriers has been measured at room temperature over the full 0-2 V bias-voltage and 0.05-40.05 GHz frequency ranges, on stable, non-oscillating devices. The classical Esaki and the quantum-inductance equivalent circuits were used to model the impedance for CAD purposes. Information about the quasibound-state lifetime against bias-voltage was extracted

U2 - 10.1049/el:19971107

DO - 10.1049/el:19971107

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VL - 33

SP - 1657

EP - 1658

JO - Electronics Letters

JF - Electronics Letters

IS - 19

ER -

Accurate equivalent-network modelling of GaAs/AlAs based resonant tunneling diodes with thin barrier layers

Abstract

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