Accurate drain conductance modeling for distortion analysis in MOSFETs

R. Langevelde, van, F.M. Klaassen

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

32 Citations (Scopus)
Original languageEnglish
Title of host publicationTechnical Digest IEDM 1997
Pages313-316
Publication statusPublished - 1997
Event1997 IEEE International Electron Devices Meeting (IEDM 1997) - Washington, D.C., United States
Duration: 7 Dec 199710 Dec 1997

Conference

Conference1997 IEEE International Electron Devices Meeting (IEDM 1997)
Abbreviated titleIEDM 1997
CountryUnited States
CityWashington, D.C.
Period7/12/9710/12/97

Cite this

Langevelde, van, R., & Klaassen, F. M. (1997). Accurate drain conductance modeling for distortion analysis in MOSFETs. In Technical Digest IEDM 1997 (pp. 313-316)