Accurate drain conductance modeling for distortion analysis in MOSFETs

R. Langevelde, van, F.M. Klaassen

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

Original language	English
Title of host publication	Technical Digest IEDM 1997
Pages	313-316
Publication status	Published - 1997
Event	1997 IEEE International Electron Devices Meeting, IEDM 1997 - Washington, United States Duration: 7 Dec 1997 → 10 Dec 1997

Conference	1997 IEEE International Electron Devices Meeting, IEDM 1997
Abbreviated title	IEDM 1997
Country/Territory	United States
City	Washington
Period	7/12/97 → 10/12/97

Cite this

@inproceedings{166e87a41a5e44c89e47163283505e1b,

title = "Accurate drain conductance modeling for distortion analysis in MOSFETs",

author = "{Langevelde, van}, R. and F.M. Klaassen",

year = "1997",

language = "English",

pages = "313--316",

booktitle = "Technical Digest IEDM 1997",

note = "1997 IEEE International Electron Devices Meeting, IEDM 1997, IEDM 1997 ; Conference date: 07-12-1997 Through 10-12-1997",

}