Accurate analytical physical modeling of amorphous InGaZnO thin-film transistors accounting for trapped and free charges

M. Ghittorelli, F. Torricelli, L. Colalongo, Z.M. Kovacs-Vajna

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Abstract

A physical-based and analytical drain current model of amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs) is proposed. The model considers the combined contribution of both trapped and free charges that move through the a-IGZO film by multiple-trapping-and-release and percolation in conduction band. The model is compared with both measurements of TFTs fabricated on a flexible substrate and numerical simulations. It is accurate in the whole range of a-IGZO TFTs operation. The model requires only physical and geometrical device parameters. The resulting mathematical expressions are suitable for computer-aided design implementation and yield the material physical parameters that are essential for process characterization.
Original languageEnglish
Pages (from-to)4105-4112
Number of pages8
JournalIEEE Transactions on Electron Devices
Volume61
Issue number12
DOIs
Publication statusPublished - 2014

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