Accurate analytical physical modeling of amorphous InGaZnO thin-film transistors accounting for trapped and free charges

M. Ghittorelli; F. Torricelli; L. Colalongo; Z.M. Kovacs-Vajna

doi:10.1109/TED.2014.2361062

Accurate analytical physical modeling of amorphous InGaZnO thin-film transistors accounting for trapped and free charges

M. Ghittorelli, F. Torricelli, L. Colalongo, Z.M. Kovacs-Vajna

Integrated Circuits

Research output: Contribution to journal › Article › Academic › peer-review

51 Citations (Scopus)

466 Downloads (Pure)

Abstract

A physical-based and analytical drain current model of amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs) is proposed. The model considers the combined contribution of both trapped and free charges that move through the a-IGZO film by multiple-trapping-and-release and percolation in conduction band. The model is compared with both measurements of TFTs fabricated on a flexible substrate and numerical simulations. It is accurate in the whole range of a-IGZO TFTs operation. The model requires only physical and geometrical device parameters. The resulting mathematical expressions are suitable for computer-aided design implementation and yield the material physical parameters that are essential for process characterization.

Original language	English
Pages (from-to)	4105-4112
Number of pages	8
Journal	IEEE Transactions on Electron Devices
Volume	61
Issue number	12
DOIs	https://doi.org/10.1109/TED.2014.2361062
Publication status	Published - 2014

Access to Document

10.1109/TED.2014.2361062

397278439282560Final author version , 3.15 MB

Cite this

@article{7bdecf0548324014bdd44e3bcf7d8050,

title = "Accurate analytical physical modeling of amorphous InGaZnO thin-film transistors accounting for trapped and free charges",

abstract = "A physical-based and analytical drain current model of amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs) is proposed. The model considers the combined contribution of both trapped and free charges that move through the a-IGZO film by multiple-trapping-and-release and percolation in conduction band. The model is compared with both measurements of TFTs fabricated on a flexible substrate and numerical simulations. It is accurate in the whole range of a-IGZO TFTs operation. The model requires only physical and geometrical device parameters. The resulting mathematical expressions are suitable for computer-aided design implementation and yield the material physical parameters that are essential for process characterization.",

author = "M. Ghittorelli and F. Torricelli and L. Colalongo and Z.M. Kovacs-Vajna",

year = "2014",

doi = "10.1109/TED.2014.2361062",

language = "English",

volume = "61",

pages = "4105--4112",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "Institute of Electrical and Electronics Engineers",

number = "12",

}

TY - JOUR

T1 - Accurate analytical physical modeling of amorphous InGaZnO thin-film transistors accounting for trapped and free charges

AU - Ghittorelli, M.

AU - Torricelli, F.

AU - Colalongo, L.

AU - Kovacs-Vajna, Z.M.

PY - 2014

Y1 - 2014

N2 - A physical-based and analytical drain current model of amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs) is proposed. The model considers the combined contribution of both trapped and free charges that move through the a-IGZO film by multiple-trapping-and-release and percolation in conduction band. The model is compared with both measurements of TFTs fabricated on a flexible substrate and numerical simulations. It is accurate in the whole range of a-IGZO TFTs operation. The model requires only physical and geometrical device parameters. The resulting mathematical expressions are suitable for computer-aided design implementation and yield the material physical parameters that are essential for process characterization.

AB - A physical-based and analytical drain current model of amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs) is proposed. The model considers the combined contribution of both trapped and free charges that move through the a-IGZO film by multiple-trapping-and-release and percolation in conduction band. The model is compared with both measurements of TFTs fabricated on a flexible substrate and numerical simulations. It is accurate in the whole range of a-IGZO TFTs operation. The model requires only physical and geometrical device parameters. The resulting mathematical expressions are suitable for computer-aided design implementation and yield the material physical parameters that are essential for process characterization.

U2 - 10.1109/TED.2014.2361062

DO - 10.1109/TED.2014.2361062

M3 - Article

SN - 0018-9383

VL - 61

SP - 4105

EP - 4112

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 12

ER -

Accurate analytical physical modeling of amorphous InGaZnO thin-film transistors accounting for trapped and free charges

Abstract

Access to Document

Fingerprint

Cite this