Accurate analytical physical modeling of amorphous InGaZnO thin-film transistors accounting for trapped and free charges

M. Ghittorelli; F. Torricelli; L. Colalongo; Z.M. Kovacs-Vajna

doi:10.1109/TED.2014.2361062

Accurate analytical physical modeling of amorphous InGaZnO thin-film transistors accounting for trapped and free charges

M. Ghittorelli, F. Torricelli, L. Colalongo, Z.M. Kovacs-Vajna

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Abstract

A physical-based and analytical drain current model of amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs) is proposed. The model considers the combined contribution of both trapped and free charges that move through the a-IGZO film by multiple-trapping-and-release and percolation in conduction band. The model is compared with both measurements of TFTs fabricated on a flexible substrate and numerical simulations. It is accurate in the whole range of a-IGZO TFTs operation. The model requires only physical and geometrical device parameters. The resulting mathematical expressions are suitable for computer-aided design implementation and yield the material physical parameters that are essential for process characterization.

Original language	English
Pages (from-to)	4105-4112
Number of pages	8
Journal	IEEE Transactions on Electron Devices
Volume	61
Issue number	12
DOIs	https://doi.org/10.1109/TED.2014.2361062
Publication status	Published - 2014

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abstract = "A physical-based and analytical drain current model of amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs) is proposed. The model considers the combined contribution of both trapped and free charges that move through the a-IGZO film by multiple-trapping-and-release and percolation in conduction band. The model is compared with both measurements of TFTs fabricated on a flexible substrate and numerical simulations. It is accurate in the whole range of a-IGZO TFTs operation. The model requires only physical and geometrical device parameters. The resulting mathematical expressions are suitable for computer-aided design implementation and yield the material physical parameters that are essential for process characterization.",

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AU - Ghittorelli, M.

AU - Torricelli, F.

AU - Colalongo, L.

AU - Kovacs-Vajna, Z.M.

PY - 2014

Y1 - 2014

N2 - A physical-based and analytical drain current model of amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs) is proposed. The model considers the combined contribution of both trapped and free charges that move through the a-IGZO film by multiple-trapping-and-release and percolation in conduction band. The model is compared with both measurements of TFTs fabricated on a flexible substrate and numerical simulations. It is accurate in the whole range of a-IGZO TFTs operation. The model requires only physical and geometrical device parameters. The resulting mathematical expressions are suitable for computer-aided design implementation and yield the material physical parameters that are essential for process characterization.

AB - A physical-based and analytical drain current model of amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs) is proposed. The model considers the combined contribution of both trapped and free charges that move through the a-IGZO film by multiple-trapping-and-release and percolation in conduction band. The model is compared with both measurements of TFTs fabricated on a flexible substrate and numerical simulations. It is accurate in the whole range of a-IGZO TFTs operation. The model requires only physical and geometrical device parameters. The resulting mathematical expressions are suitable for computer-aided design implementation and yield the material physical parameters that are essential for process characterization.

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JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 12

ER -

Accurate analytical physical modeling of amorphous InGaZnO thin-film transistors accounting for trapped and free charges

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