Absolute in situ measurement of surface dangling bonds during a-Si:H growth

I.M.P. Aarts, A.C.R. Pipino, M.C.M. Sanden, van de, W.M.M. Kessels

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Abstract

Hydrogenated amorphous silicon (a-Si:H) is regarded as a model system in mechanistic studies of amorphous semiconductor film growth, where the key reactive site is generally considered to be a surface \"dangling bond. \" Employing an ultrahigh-Q (~1010) monolithic optical resonator, the authors probe the creation of dangling-bond defects during growth of a-Si:H from a predominantly SiHx (x=0-3) radical flux by detecting the assocd. near-IR subgap absorption with evanescent wave cavity ringdown spectroscopy. They find the apparent dangling-bond creation rate [(5+-3)*1012 cm-2 s-1] and steady-state surface d. [(5+-2)*1011 cm-2] to be considerably lower than expected from dangling-bond-based growth mechanisms. [on SciFinder (R)]
Original languageEnglish
Article number161918
Pages (from-to)161918-1/3
Number of pages3
JournalApplied Physics Letters
Volume90
Issue number16
DOIs
Publication statusPublished - 2007

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