TY - JOUR
T1 - Absolute densities of reaction products from plasma etching of quartz
AU - van Veldhuizen, E.M.
AU - Bisschops, Th.
AU - van Vliembergen, E.J.W.
AU - van Wolput, J.H.M.C.
PY - 1985/1/1
Y1 - 1985/1/1
N2 - The plasma of a CF4-quartz etching system is investigated with optical methods. The presence of CF2, CF, F, and CO is demonstrated from ultraviolet and visible emission. Using infrared absorption the absolute densities of the reaction products SiF4and CO are found to be 2.5 ± 0.4 X 1020and3 ± 2x 1020m-3. CF2 radicals are not found with infrared absorption which means that their density is below 1019m-3. The results indicate that quartz is etched through the reaction Si02 + 2CF2—â–º SiF4+ 2CO.
AB - The plasma of a CF4-quartz etching system is investigated with optical methods. The presence of CF2, CF, F, and CO is demonstrated from ultraviolet and visible emission. Using infrared absorption the absolute densities of the reaction products SiF4and CO are found to be 2.5 ± 0.4 X 1020and3 ± 2x 1020m-3. CF2 radicals are not found with infrared absorption which means that their density is below 1019m-3. The results indicate that quartz is etched through the reaction Si02 + 2CF2—â–º SiF4+ 2CO.
UR - http://www.scopus.com/inward/record.url?scp=4043169703&partnerID=8YFLogxK
U2 - 10.1116/1.572891
DO - 10.1116/1.572891
M3 - Comment/Letter to the editor
AN - SCOPUS:4043169703
SN - 0734-2101
VL - 3
SP - 2205
EP - 2208
JO - Journal of Vacuum Science and Technology A
JF - Journal of Vacuum Science and Technology A
IS - 6
ER -