Absolute densities of reaction products from plasma etching of quartz

E.M. van Veldhuizen, Th. Bisschops, E.J.W. van Vliembergen, J.H.M.C. van Wolput

Research output: Contribution to journalComment/Letter to the editorAcademicpeer-review

30 Citations (Scopus)

Abstract

The plasma of a CF4-quartz etching system is investigated with optical methods. The presence of CF2, CF, F, and CO is demonstrated from ultraviolet and visible emission. Using infrared absorption the absolute densities of the reaction products SiF4and CO are found to be 2.5 ± 0.4 X 1020and3 ± 2x 1020m-3. CF2 radicals are not found with infrared absorption which means that their density is below 1019m-3. The results indicate that quartz is etched through the reaction Si02 + 2CF2—â–º SiF4+ 2CO.

Original languageEnglish
Pages (from-to)2205-2208
Number of pages4
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces, and Films
Volume3
Issue number6
DOIs
Publication statusPublished - 1 Jan 1985

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