Absolute densities of N and excited N2 in a N2 plasma

S. Agarwal; B. Hoex; M.C.M. Sanden, van de; D. Maroudas; E.S. Aydil

doi:10.1063/1.1630843

Absolute densities of N and excited N2 in a N2 plasma

S. Agarwal, B. Hoex, M.C.M. Sanden, van de, D. Maroudas, E.S. Aydil

Plasma & Materials Processing

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Abstract

Atomic N and excited N2 (N) play important roles in plasma-assisted synthesis of nitride materials, such as GaN. Absolute densities of N and N were measured at the substrate plane in an inductively coupled N2 plasma in the pressure range of 10 to 200 mTorr using modulated-beam line-of-sight threshold ionization mass spectrometry. The density of N increased with increasing pressure from 2.9×1018 to 1.8×1019 m–3, while the density of N was in the range of 9.7×1017 to 2.4×1018 m–3, with a maximum at 50 mTorr. Based on the appearance potential of N at ~12 eV, we identify this excited molecule as long-lived N2 (A3) metastable

Original language	English
Pages (from-to)	4918-4920
Journal	Applied Physics Letters
Volume	83
Issue number	24
DOIs	https://doi.org/10.1063/1.1630843
Publication status	Published - 2003

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@article{6425d0b97d874bb3b85a8077942ed573,

title = "Absolute densities of N and excited N2 in a N2 plasma",

abstract = "Atomic N and excited N2 (N) play important roles in plasma-assisted synthesis of nitride materials, such as GaN. Absolute densities of N and N were measured at the substrate plane in an inductively coupled N2 plasma in the pressure range of 10 to 200 mTorr using modulated-beam line-of-sight threshold ionization mass spectrometry. The density of N increased with increasing pressure from 2.9×1018 to 1.8×1019 m–3, while the density of N was in the range of 9.7×1017 to 2.4×1018 m–3, with a maximum at 50 mTorr. Based on the appearance potential of N at ~12 eV, we identify this excited molecule as long-lived N2 (A3) metastable",

author = "S. Agarwal and B. Hoex and {Sanden, van de}, M.C.M. and D. Maroudas and E.S. Aydil",

year = "2003",

doi = "10.1063/1.1630843",

language = "English",

volume = "83",

pages = "4918--4920",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "24",

}

TY - JOUR

T1 - Absolute densities of N and excited N2 in a N2 plasma

AU - Agarwal, S.

AU - Hoex, B.

AU - Sanden, van de, M.C.M.

AU - Maroudas, D.

AU - Aydil, E.S.

PY - 2003

Y1 - 2003

N2 - Atomic N and excited N2 (N) play important roles in plasma-assisted synthesis of nitride materials, such as GaN. Absolute densities of N and N were measured at the substrate plane in an inductively coupled N2 plasma in the pressure range of 10 to 200 mTorr using modulated-beam line-of-sight threshold ionization mass spectrometry. The density of N increased with increasing pressure from 2.9×1018 to 1.8×1019 m–3, while the density of N was in the range of 9.7×1017 to 2.4×1018 m–3, with a maximum at 50 mTorr. Based on the appearance potential of N at ~12 eV, we identify this excited molecule as long-lived N2 (A3) metastable

AB - Atomic N and excited N2 (N) play important roles in plasma-assisted synthesis of nitride materials, such as GaN. Absolute densities of N and N were measured at the substrate plane in an inductively coupled N2 plasma in the pressure range of 10 to 200 mTorr using modulated-beam line-of-sight threshold ionization mass spectrometry. The density of N increased with increasing pressure from 2.9×1018 to 1.8×1019 m–3, while the density of N was in the range of 9.7×1017 to 2.4×1018 m–3, with a maximum at 50 mTorr. Based on the appearance potential of N at ~12 eV, we identify this excited molecule as long-lived N2 (A3) metastable

U2 - 10.1063/1.1630843

DO - 10.1063/1.1630843

M3 - Article

SN - 0003-6951

VL - 83

SP - 4918

EP - 4920

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 24

ER -

Absolute densities of N and excited N2 in a N2 plasma

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