Absolute densities of N and excited N2 in a N2 plasma

S. Agarwal, B. Hoex, M.C.M. Sanden, van de, D. Maroudas, E.S. Aydil

Research output: Contribution to journalArticleAcademicpeer-review

62 Citations (Scopus)
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Abstract

Atomic N and excited N2 (N) play important roles in plasma-assisted synthesis of nitride materials, such as GaN. Absolute densities of N and N were measured at the substrate plane in an inductively coupled N2 plasma in the pressure range of 10 to 200 mTorr using modulated-beam line-of-sight threshold ionization mass spectrometry. The density of N increased with increasing pressure from 2.9×1018 to 1.8×1019 m–3, while the density of N was in the range of 9.7×1017 to 2.4×1018 m–3, with a maximum at 50 mTorr. Based on the appearance potential of N at ~12 eV, we identify this excited molecule as long-lived N2 (A3) metastable
Original languageEnglish
Pages (from-to)4918-4920
JournalApplied Physics Letters
Volume83
Issue number24
DOIs
Publication statusPublished - 2003

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