Absence of the enhanced intra-4f transition cross section at 1.5 µm of Er3+ in Si-rich SiO2

H. Mertens, A. Polman, I.M.P. Aarts, W.M.M. Kessels, M.C.M. Sanden, van de

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Abstract

We present measurements of the optical absorption cross section of the 4I15/24I13/2 transition at 1.5 µm of Er3+ ions embedded in SiO2 and Si-rich oxide, using cavity ringdown spectroscopy on thin films. The peak absorption cross section for Er3+ embedded in Si-rich oxide (10 at. % excess Si) was found to be (8±2)×10–21 cm2 at 1536 nm, similar to typical values for Er embedded in SiO2. The data imply that the silicon nanoclusters incorporated in Si-rich oxide do not enhance the peak cross section of the Er3+ 4I15/2–4I13/2 transition by 1-2 orders of magnitude, contrary to what has been reported in earlier work.
Original languageEnglish
Article number241109
Pages (from-to)241109-1/3
Number of pages3
JournalApplied Physics Letters
Volume86
Issue number24
DOIs
Publication statusPublished - 2005

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