Above-threshold leakage in semiconductor lasers : an analytical physical model

I.M.P. Aarts, E.H. Sargent

Research output: Contribution to journalArticleAcademicpeer-review

11 Citations (Scopus)

Abstract

We present an analytical physical model for above-threshold leakage in semiconductor lasers. The model can be applied to estimate whether heterobarrier lowering and accompanying overbarrier leakage are within reach of having serious deleterious effects on laser performance. The model uses two-dimensional fully self-consistent numerical equations that arise from comprehensive systems of partial coupled differential equations. The effect of temperature and doping on laser efficiency is analyzed for two lasers, one designed for operation at 1.3 µm and the other at 1.55 µm. Both devices are assumed to be built in the InGaAsP-InP material system. We show that, even in a 1.55-µm laser, overbarrier leakage can cause severe performance degradation at typical operating temperatures and doping levels, and we argue that overbarrier leakage deserves to be treated as a potential threat to laser performance at telecommunication wavelengths
Original languageEnglish
Pages (from-to)496-501
JournalIEEE Journal of Quantum Electronics
Volume36
Issue number4
DOIs
Publication statusPublished - 2000

Fingerprint

Dive into the research topics of 'Above-threshold leakage in semiconductor lasers : an analytical physical model'. Together they form a unique fingerprint.

Cite this