A top-down approach to fabrication of high quality vertical heterostructure nanowire arrays

Hua Wang, Minghua Sun, K. Ding, M.T. Hill, C.Z. Ning

Research output: Contribution to journalArticleAcademicpeer-review

34 Citations (Scopus)
115 Downloads (Pure)

Abstract

We demonstrate a novel top-down approach for fabricating nanowires with unprecedented complexity and optical quality by taking advantage of a nanoscale self-masking effect. We realized vertical arrays of nanowires of 20-40 nm in diameter with 16 segments of complex longitudinal InGaAsP/InP structures. The unprecedented high quality of etched wires is evidenced by the narrowest photoluminescence linewidth ever produced in similar wavelengths, indistinguishable from that of the corresponding wafer. This top-down, mask-free, large scale approach is compatible with the established device fabrication processes and could serve as an important alternative to the bottom-up approach, significantly expanding ranges and varieties of applications of nanowire technology
Original languageEnglish
Pages (from-to)1646-1650
Number of pages5
JournalNano Letters
Volume11
Issue number4
DOIs
Publication statusPublished - 2011

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