A thin SiO layer as a remedy for the indium reduction at the In2O3/μc-Si:C:H interface

J.M.M. Nijs, de; C. Carvalho; M. Santos; R. Martins

doi:10.1016/0169-4332(91)90077-W

A thin SiO layer as a remedy for the indium reduction at the In2O3/μc-Si:C:H interface

J.M.M. Nijs, de
, C. Carvalho
, M. Santos
, R. Martins

Research output: Contribution to journal › Article › Academic › peer-review

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Abstract

The reduction of the In2O3 caused by the deposition of µc-Si:C:H by means of plasma-enhanced CVD, is considerably diminished if a thin (50 Å) silicon monoxide layer is applied as a diffusion barrier. The amount of reduced indium diminishes by a factor three while the amount of silicon oxide is also less, although SiO was added on purpose. First results on an amorphous silicon In2O3/pi junction show that the SiO layer benefits the opto-electrical characteristics.

Original language	English
Pages (from-to)	339-342
Number of pages	4
Journal	Applied Surface Science
Volume	52
Issue number	4
DOIs	https://doi.org/10.1016/0169-4332(91)90077-W
Publication status	Published - 1991

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title = "A thin SiO layer as a remedy for the indium reduction at the In2O3/μc-Si:C:H interface",

abstract = "The reduction of the In2O3 caused by the deposition of µc-Si:C:H by means of plasma-enhanced CVD, is considerably diminished if a thin (50 {\AA}) silicon monoxide layer is applied as a diffusion barrier. The amount of reduced indium diminishes by a factor three while the amount of silicon oxide is also less, although SiO was added on purpose. First results on an amorphous silicon In2O3/pi junction show that the SiO layer benefits the opto-electrical characteristics.",

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T1 - A thin SiO layer as a remedy for the indium reduction at the In2O3/μc-Si:C:H interface

AU - Nijs, de, J.M.M.

AU - Carvalho, C.

AU - Santos, M.

AU - Martins, R.

PY - 1991

Y1 - 1991

N2 - The reduction of the In2O3 caused by the deposition of µc-Si:C:H by means of plasma-enhanced CVD, is considerably diminished if a thin (50 Å) silicon monoxide layer is applied as a diffusion barrier. The amount of reduced indium diminishes by a factor three while the amount of silicon oxide is also less, although SiO was added on purpose. First results on an amorphous silicon In2O3/pi junction show that the SiO layer benefits the opto-electrical characteristics.

AB - The reduction of the In2O3 caused by the deposition of µc-Si:C:H by means of plasma-enhanced CVD, is considerably diminished if a thin (50 Å) silicon monoxide layer is applied as a diffusion barrier. The amount of reduced indium diminishes by a factor three while the amount of silicon oxide is also less, although SiO was added on purpose. First results on an amorphous silicon In2O3/pi junction show that the SiO layer benefits the opto-electrical characteristics.

U2 - 10.1016/0169-4332(91)90077-W

DO - 10.1016/0169-4332(91)90077-W

M3 - Article

SN - 0169-4332

VL - 52

SP - 339

EP - 342

JO - Applied Surface Science

JF - Applied Surface Science

IS - 4

ER -

A thin SiO layer as a remedy for the indium reduction at the In2O3/μc-Si:C:H interface

Abstract

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