A thin silicon monoxide layer as a remedy for the indium reduction at the indium oxide (In2O3)/mc-hydrogenated silicon carbide interface

J.M.M. Nijs, de; C. Carvalho; M. Santos; R. Martins

doi:10.1016/0169-4332%2891%2990077-W

A thin silicon monoxide layer as a remedy for the indium reduction at the indium oxide (In2O3)/mc-hydrogenated silicon carbide interface

J.M.M. Nijs, de, C. Carvalho, M. Santos, R. Martins

Research output: Contribution to journal › Article › Academic › peer-review

5 Citations (Scopus)

1 Downloads (Pure)

Abstract

The reduction of the In2O3 caused by the deposition of µc-Si:C:H by means of plasma-enhanced CVD, is considerably diminished if a thin (50 Å) silicon monoxide layer is applied as a diffusion barrier. The amount of reduced indium diminishes by a factor three while the amount of silicon oxide is also less, although SiO was added on purpose. First results on an amorphous silicon In2O3/pi junction show that the SiO layer benefits the opto-electrical characteristics.

Original language	English
Pages (from-to)	339-342
Number of pages	4
Journal	Applied Surface Science
Volume	52
Issue number	4
DOIs	https://doi.org/10.1016/0169-4332%2891%2990077-W https://doi.org/10.1016/0169-4332(91)90077-W
Publication status	Published - 1991

Access to Document

Cite this

@article{30514eb5cd59477c992d35b9c534b798,

title = "A thin silicon monoxide layer as a remedy for the indium reduction at the indium oxide (In2O3)/mc-hydrogenated silicon carbide interface",

abstract = "The reduction of the In2O3 caused by the deposition of µc-Si:C:H by means of plasma-enhanced CVD, is considerably diminished if a thin (50 {\AA}) silicon monoxide layer is applied as a diffusion barrier. The amount of reduced indium diminishes by a factor three while the amount of silicon oxide is also less, although SiO was added on purpose. First results on an amorphous silicon In2O3/pi junction show that the SiO layer benefits the opto-electrical characteristics.",

author = "{Nijs, de}, J.M.M. and C. Carvalho and M. Santos and R. Martins",

year = "1991",

doi = "10.1016/0169-4332%2891%2990077-W",

language = "English",

volume = "52",

pages = "339--342",

journal = "Applied Surface Science",

issn = "0169-4332",

publisher = "Elsevier",

number = "4",

}

TY - JOUR

T1 - A thin silicon monoxide layer as a remedy for the indium reduction at the indium oxide (In2O3)/mc-hydrogenated silicon carbide interface

AU - Nijs, de, J.M.M.

AU - Carvalho, C.

AU - Santos, M.

AU - Martins, R.

PY - 1991

Y1 - 1991

N2 - The reduction of the In2O3 caused by the deposition of µc-Si:C:H by means of plasma-enhanced CVD, is considerably diminished if a thin (50 Å) silicon monoxide layer is applied as a diffusion barrier. The amount of reduced indium diminishes by a factor three while the amount of silicon oxide is also less, although SiO was added on purpose. First results on an amorphous silicon In2O3/pi junction show that the SiO layer benefits the opto-electrical characteristics.

AB - The reduction of the In2O3 caused by the deposition of µc-Si:C:H by means of plasma-enhanced CVD, is considerably diminished if a thin (50 Å) silicon monoxide layer is applied as a diffusion barrier. The amount of reduced indium diminishes by a factor three while the amount of silicon oxide is also less, although SiO was added on purpose. First results on an amorphous silicon In2O3/pi junction show that the SiO layer benefits the opto-electrical characteristics.

U2 - 10.1016/0169-4332%2891%2990077-W

DO - 10.1016/0169-4332%2891%2990077-W

M3 - Article

SN - 0169-4332

VL - 52

SP - 339

EP - 342

JO - Applied Surface Science

JF - Applied Surface Science

IS - 4

ER -

A thin silicon monoxide layer as a remedy for the indium reduction at the indium oxide (In2O3)/mc-hydrogenated silicon carbide interface

Abstract

Access to Document

Fingerprint

Cite this