A survey of SiC power MOSFETs short-circuit robustness and failure mode analysis

L. Ceccarelli; P. D. Reigosa; F. Iannuzzo; F. Blaabjerg

doi:10.1016/j.microrel.2017.06.093

A survey of SiC power MOSFETs short-circuit robustness and failure mode analysis

L. Ceccarelli
, P. D. Reigosa
, F. Iannuzzo
, F. Blaabjerg

Research output: Contribution to journal › Article › Academic › peer-review

100 Citations (Scopus)

Abstract

The aim of this paper is to provide an extensive overview about the state-of-art commercially available SiC power MOSFET, focusing on their short-circuit ruggedness. A detailed literature investigation has been carried out, in order to collect and understand the latest research contribution within this topic and create a survey of the present scenario of SiC MOSFETs reliability evaluation and failure mode analysis, pointing out the evolution and improvements as well as the future challenges in this promising device technology.

Original language	English
Pages (from-to)	272-276
Number of pages	5
Journal	Microelectronics Reliability
Volume	76-77
DOIs	https://doi.org/10.1016/j.microrel.2017.06.093
Publication status	Published - Sept 2017
Externally published	Yes

Keywords

Failure mechanisms
Short-circuit
Short-circuit ruggedness
SiC MOSFETs

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10.1016/j.microrel.2017.06.093

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abstract = "The aim of this paper is to provide an extensive overview about the state-of-art commercially available SiC power MOSFET, focusing on their short-circuit ruggedness. A detailed literature investigation has been carried out, in order to collect and understand the latest research contribution within this topic and create a survey of the present scenario of SiC MOSFETs reliability evaluation and failure mode analysis, pointing out the evolution and improvements as well as the future challenges in this promising device technology.",

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KW - Short-circuit

KW - Short-circuit ruggedness

KW - SiC MOSFETs

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ER -

A survey of SiC power MOSFETs short-circuit robustness and failure mode analysis

Abstract

Keywords

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