a-Si:H/c-Si heterointerface formation and epitaxial growth studied by real time optical probes

J.J.H. Gielis, P.J. Oever, van den, M.C.M. Sanden, van de, W.M.M. Kessels

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Abstract

The deposition of amorphous and epitaxial silicon thin films on H-terminated Si(100) has been studied in real time by the simultaneous application of spectroscopic ellipsometry, attenuated total reflection infrared spectroscopy, and optical second-harmonic generation. The morphology development of the films could be monitored nonintrusively in terms of critical point resonances and H bonding resolving the abruptness of the film-substrate interface and providing a clear distinction between direct heterointerface formation, nanometer-level epitaxial growth, and epitaxial breakdown. ©2007 American Institute of Physics
Original languageEnglish
Article number202108
Pages (from-to)202108-1/3
Number of pages3
JournalApplied Physics Letters
Volume90
Issue number20
DOIs
Publication statusPublished - 2007

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