Abstract
Following the continuous development of wide bandgap (WBG) devices and multilevel converter technology, medium voltage active front ends are becoming promising in future high-power-density and high-power applications. However, the cost issue is one of the major drawbacks, which stops the WBG devices from being widely applied in high-power areas. This article proposes a silicon carbide (SiC) and silicon (Si) hybrid five-level unidirectional rectifier. It requires only four SiC MOSFETs with relatively low blocking voltage and four Si diodes. Meanwhile, by adding snubber capacitors, all the Si devices are with low-speed switching, and the voltage stresses of fast SiC MOSFETs are minimized. In this article, operational analysis and carrier-based phase-disposition pulsewidth modulation scheme for this circuit are discussed in detail. The capacitor voltage balancing and unity power factor are both realized. Simulation and scaled-down experimental results are demonstrated to verify the proposed rectifier. Furthermore, the comparison of the hybrid five-level rectifiers is given to show the advantages of the proposed rectifier in terms of voltage stress, efficiency, and cost.
Original language | English |
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Article number | 9519533 |
Pages (from-to) | 7537-7548 |
Number of pages | 12 |
Journal | IEEE Transactions on Industrial Electronics |
Volume | 69 |
Issue number | 8 |
DOIs | |
Publication status | Published - 1 Aug 2022 |
Externally published | Yes |
Keywords
- Active front end (AFE)
- five-level rectifier
- hybrid rectifier
- medium voltage (MV)
- silicon carbide (SiC)