A real-time study of the a-Si:H/c-Si interface formation using ellipsometry, infrared spectroscopy, and second harmonic generation

W.M.M. Kessels, P.J. Oever, van den, J.J.H. Gielis, B. Hoex, M.C.M. Sanden, van de

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

Abstract

The formation of the c-Si/a-Si:H interface has been studied in real time during the deposition of a-Si:H on H-terminated c-Si using hot-wire CVD. Several optical diagnostics were used simultaneously: spectroscopic ellipsometry revealing information about the film morphology during the initial stage of growth; attenuated total reflection infrared spectroscopy yielding the H-bonding configuration and depth profile; and optical second harmonic generation providing insight into c-Si and a-Si:H interface and surface states. In this paper these techniques are introduced and initial results are presented
Original languageEnglish
Title of host publicationConference record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion. Waikoloa, HI, USA. IEEE Electron Devices Soc. 7-12 May 2006
Place of PublicationPiscataway, NJ, USA
PublisherInstitute of Electrical and Electronics Engineers
Pages1616-1619
ISBN (Print)1-424-40016-3
DOIs
Publication statusPublished - 2006
Eventconference; WCPEC : IEEE World Conference on Photovoltaic Energy Conversion ; 4 (Waikoloa, Hawaii) : 2006.05.07-12 -
Duration: 1 Jan 2006 → …

Conference

Conferenceconference; WCPEC : IEEE World Conference on Photovoltaic Energy Conversion ; 4 (Waikoloa, Hawaii) : 2006.05.07-12
Period1/01/06 → …
OtherWCPEC : IEEE World Conference on Photovoltaic Energy Conversion ; 4 (Waikoloa, Hawaii) : 2006.05.07-12

Fingerprint

Dive into the research topics of 'A real-time study of the a-Si:H/c-Si interface formation using ellipsometry, infrared spectroscopy, and second harmonic generation'. Together they form a unique fingerprint.

Cite this