A real-time study of the a-Si/c-Si interface formation during deposition using ellipsometry, infrared spectroscopy, and second-harmonic generation

P.J. Oever, van den; J.J.H. Gielis; B. Hoex; Richard van de Sanden; W.M.M. Kessels

A real-time study of the a-Si/c-Si interface formation during deposition using ellipsometry, infrared spectroscopy, and second-harmonic generation

P.J. Oever, van den, J.J.H. Gielis, B. Hoex, Richard van de Sanden, W.M.M. Kessels

Research output: Contribution to conference › Poster

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Abstract

No abstract

Original language	English
Pages	B 9-
Publication status	Published - 2006
Event	18th NNV/CPS Symposium on Plasma Physics and Radiation Technology, March 22-23, 2006, Lunteren, The Netherlands - Lunteren, Netherlands Duration: 22 Mar 2006 → 23 Mar 2006

Conference

Conference	18th NNV/CPS Symposium on Plasma Physics and Radiation Technology, March 22-23, 2006, Lunteren, The Netherlands
Country/Territory	Netherlands
City	Lunteren
Period	22/03/06 → 23/03/06

Bibliographical note

18th symposium plasma physics and radiation technology : March 22-23, 2006, Lunteren : programme and abstracts

Cite this

Oever, van den, P. J., Gielis, J. J. H., Hoex, B., van de Sanden, R., & Kessels, W. M. M. (2006). A real-time study of the a-Si/c-Si interface formation during deposition using ellipsometry, infrared spectroscopy, and second-harmonic generation. B 9-. Poster session presented at 18th NNV/CPS Symposium on Plasma Physics and Radiation Technology, March 22-23, 2006, Lunteren, The Netherlands, Lunteren, Netherlands.

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title = "A real-time study of the a-Si/c-Si interface formation during deposition using ellipsometry, infrared spectroscopy, and second-harmonic generation",

abstract = "No abstract",

author = "{Oever, van den}, P.J. and J.J.H. Gielis and B. Hoex and {van de Sanden}, Richard and W.M.M. Kessels",

note = "18th symposium plasma physics and radiation technology : March 22-23, 2006, Lunteren : programme and abstracts; 18th NNV/CPS Symposium on Plasma Physics and Radiation Technology, March 22-23, 2006, Lunteren, The Netherlands ; Conference date: 22-03-2006 Through 23-03-2006",

year = "2006",

language = "English",

pages = "B 9--",

}

Oever, van den, PJ, Gielis, JJH, Hoex, B, van de Sanden, R & Kessels, WMM 2006, 'A real-time study of the a-Si/c-Si interface formation during deposition using ellipsometry, infrared spectroscopy, and second-harmonic generation', 18th NNV/CPS Symposium on Plasma Physics and Radiation Technology, March 22-23, 2006, Lunteren, The Netherlands, Lunteren, Netherlands, 22/03/06 - 23/03/06 pp. B 9-.

A real-time study of the a-Si/c-Si interface formation during deposition using ellipsometry, infrared spectroscopy, and second-harmonic generation. / Oever, van den, P.J.; Gielis, J.J.H.; Hoex, B. et al.
2006. B 9- Poster session presented at 18th NNV/CPS Symposium on Plasma Physics and Radiation Technology, March 22-23, 2006, Lunteren, The Netherlands, Lunteren, Netherlands.

Research output: Contribution to conference › Poster

TY - CONF

T1 - A real-time study of the a-Si/c-Si interface formation during deposition using ellipsometry, infrared spectroscopy, and second-harmonic generation

AU - Oever, van den, P.J.

AU - Gielis, J.J.H.

AU - Hoex, B.

AU - van de Sanden, Richard

AU - Kessels, W.M.M.

N1 - 18th symposium plasma physics and radiation technology : March 22-23, 2006, Lunteren : programme and abstracts

PY - 2006

Y1 - 2006

N2 - No abstract

AB - No abstract

M3 - Poster

SP - B 9-

T2 - 18th NNV/CPS Symposium on Plasma Physics and Radiation Technology, March 22-23, 2006, Lunteren, The Netherlands

Y2 - 22 March 2006 through 23 March 2006

ER -

Oever, van den PJ, Gielis JJH, Hoex B, van de Sanden R , Kessels WMM. A real-time study of the a-Si/c-Si interface formation during deposition using ellipsometry, infrared spectroscopy, and second-harmonic generation. 2006. Poster session presented at 18th NNV/CPS Symposium on Plasma Physics and Radiation Technology, March 22-23, 2006, Lunteren, The Netherlands, Lunteren, Netherlands.

A real-time study of the a-Si/c-Si interface formation during deposition using ellipsometry, infrared spectroscopy, and second-harmonic generation

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