A novel type of power picosecond semiconductor switches based on tunneling-assisted impact ionization fronts

P. Rodin; U. Ebert; W. Hundsdorfer; I.V. Grekhov

A novel type of power picosecond semiconductor switches based on tunneling-assisted impact ionization fronts

P. Rodin
, U. Ebert
, W. Hundsdorfer
, I.V. Grekhov

Elementary Processes in Gas Discharges

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

1 Citation (Scopus)

Abstract

We propose a novel type of closing semiconductor switches based on a new physical mechanism - the propagation of a superfast tunneling-assisted impact ionization front. We present numerical simulations of the switching transients in the proposed devices. Our numerical results suggest that with the new mechanism, voltage pulses with a ramp up to 500 kV/ns and amplitude up to 8 kV can be formed. This sets new frontiers in pulse power electronics

Original language	English
Title of host publication	Proceedings of the 25th International Power Modulator Symposium, Hollywood, CA, 30 June 2002 through 3 July 2002
Pages	445-448
Publication status	Published - 2002
Event	25th International Power Modulator Symposium and 19th High Voltage Workshop - Hollywood, United States Duration: 30 Jun 2002 → 3 Jul 2002

Conference

Conference	25th International Power Modulator Symposium and 19th High Voltage Workshop
Country/Territory	United States
City	Hollywood
Period	30/06/02 → 3/07/02
Other	25th International Power Modulator Symposium and 2002 High Voltage Workshop

Cite this

@inproceedings{410b3d2720084ab29c419cdcb126256f,

title = "A novel type of power picosecond semiconductor switches based on tunneling-assisted impact ionization fronts",

abstract = "We propose a novel type of closing semiconductor switches based on a new physical mechanism - the propagation of a superfast tunneling-assisted impact ionization front. We present numerical simulations of the switching transients in the proposed devices. Our numerical results suggest that with the new mechanism, voltage pulses with a ramp up to 500 kV/ns and amplitude up to 8 kV can be formed. This sets new frontiers in pulse power electronics",

author = "P. Rodin and U. Ebert and W. Hundsdorfer and I.V. Grekhov",

year = "2002",

language = "English",

isbn = "0-7803-7540-8",

pages = "445--448",

booktitle = "Proceedings of the 25th International Power Modulator Symposium, Hollywood, CA, 30 June 2002 through 3 July 2002",

note = "25th International Power Modulator Symposium and 19th High Voltage Workshop ; Conference date: 30-06-2002 Through 03-07-2002",

}

Rodin, P, Ebert, U, Hundsdorfer, W & Grekhov, IV 2002, A novel type of power picosecond semiconductor switches based on tunneling-assisted impact ionization fronts. in Proceedings of the 25th International Power Modulator Symposium, Hollywood, CA, 30 June 2002 through 3 July 2002. pp. 445-448, 25th International Power Modulator Symposium and 19th High Voltage Workshop, Hollywood, California, United States, 30/06/02.

A novel type of power picosecond semiconductor switches based on tunneling-assisted impact ionization fronts. / Rodin, P.; Ebert, U.; Hundsdorfer, W. et al.
Proceedings of the 25th International Power Modulator Symposium, Hollywood, CA, 30 June 2002 through 3 July 2002. 2002. p. 445-448.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - A novel type of power picosecond semiconductor switches based on tunneling-assisted impact ionization fronts

AU - Rodin, P.

AU - Ebert, U.

AU - Hundsdorfer, W.

AU - Grekhov, I.V.

PY - 2002

Y1 - 2002

N2 - We propose a novel type of closing semiconductor switches based on a new physical mechanism - the propagation of a superfast tunneling-assisted impact ionization front. We present numerical simulations of the switching transients in the proposed devices. Our numerical results suggest that with the new mechanism, voltage pulses with a ramp up to 500 kV/ns and amplitude up to 8 kV can be formed. This sets new frontiers in pulse power electronics

AB - We propose a novel type of closing semiconductor switches based on a new physical mechanism - the propagation of a superfast tunneling-assisted impact ionization front. We present numerical simulations of the switching transients in the proposed devices. Our numerical results suggest that with the new mechanism, voltage pulses with a ramp up to 500 kV/ns and amplitude up to 8 kV can be formed. This sets new frontiers in pulse power electronics

M3 - Conference contribution

SN - 0-7803-7540-8

SP - 445

EP - 448

BT - Proceedings of the 25th International Power Modulator Symposium, Hollywood, CA, 30 June 2002 through 3 July 2002

T2 - 25th International Power Modulator Symposium and 19th High Voltage Workshop

Y2 - 30 June 2002 through 3 July 2002

ER -

A novel type of power picosecond semiconductor switches based on tunneling-assisted impact ionization fronts

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Conference

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